Investigation of structural and optical parameters of Cu-Ag-In-Se thin films deposited by thermal evaporation method

Date

2015-01-01

Author

Gullu, H. H.
CANDAN, İDRİS
COŞKUN, EMRE
Parlak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

308
views

0
downloads

Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film deposited by the thermal evaporation has been investigated. The evaporation source was prepared by using vertical Bridgman-Stockbarger crystal growth system. Structural analysis indicated that annealing the films following to the deposition resulted in the changes from amorphous to polycrystalline phase with the preferred orientation along (1 1 2) direction. In order to determine the optical properties of the thin films as a function of annealing temperature, the transmission measurements were carried out in between 300 and 2000 nm. The optical band gap values were lying in between 1.29 and 1.50 eV upon annealing the thin films in the temperature range of 300-500 degrees C. The refractive indices of the samples were in the range of 2.7-3.8 depending on the wavelength region and annealing temperature by applying the Envelope Method. The other optical constants of the samples were also calculated using Cauchy Method and Single Oscillator Model. (C) 2015 Elsevier GmbH. All rights reserved.

Subject Keywords

Thin film, Chalcogenide, Vapor deposition, X-ray diffraction, Optical properties

URI

https://hdl.handle.net/11511/34667

Journal

OPTIK

DOI

https://doi.org/10.1016/j.ijleo.2015.05.026

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of physical properties of quaternary AgGa0.5In0.5Te2 thin films deposited by thermal evaporation Karaagac, H.; Parlak, Mehmet (Elsevier BV, 2010-8) The aim of this study is to understand the structural, optical and photo-electrical properties of the quaternary chalcogenide AgGa 0.5In0.5Te2 thin films deposited onto the glass substrates by thermal evaporation of the single crystalline powder. Energy dispersive X-ray analysis (EDXA) showed remarkable change in atomic percentage of the constituent elements after annealing. The X-ray diffraction (XRD) of the films below the annealing temperature of 300°C indicated the polycrystalline structure with co-exis...
Study on the Structural and Electrical Properties of Sequentially Deposited Ag-Ga-In-Te Thin Films Coskun, EMRE; Gullu, H. H.; Parlak, Mehmet; Ercelebi, C. (2015-02-01) The structural properties and electrical conduction mechanisms of Ag-Ga-In-Te thin films deposited by a combination of e-beam and thermal evaporation methods were studied for various annealing temperatures. Structural analysis showed the existence of InTe and InTe binary phases at the early stage of crystallization and monophase of AgGaInTe with the main orientation along (112) direction following the post-annealing at 400 C. The effects of the structural changes on electrical properties and temperature dep...
Investigation of structural and optical characteristics of thermally evaporated Ga2Se3 thin films Isik, M.; Hasanlı, Nızamı (2020-09-01) Ga2Se3 thin films were prepared by thermal evaporation technique and structural, optical characteristics of the deposited thin films were investigated in the present study. X-ray diffraction pattern of the thin film exhibited one intensive and sharp peak associated with (111) plane of cubic crystalline structure of the compound. Energy dispersive spectroscopic analyses pointed out the atomic compositional ratio of the constituent elements as consistent with chemical formula of Ga2Se3. The optical characteri...
Structural and optical properties of Zn-In-Te thin films deposited by thermal evaporation technique Gullu, H. H.; Bayrakli, O.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2013-07-25) Annealing effects on structural and optical properties of the thermally evaporated Zn-In-Te(ZIT) thin films have been investigated. The structural and the compositional analyses were carried out by means of X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDXA). The as-grown and annealed ZIT films had polycrystalline structure and the preferred orientation changed from (220) to (112) direction with increasing annealing temperature. The optical properties and constants were determined by transmi...
Structural and optical properties of thermally evaporated Ga-In-Se thin films IŞIK, MEHMET; Güllü, Hasan Hüseyin (2014-05-30) In this paper, structural and optical properties of Ga-In-Se (GIS) thin films deposited by thermal evaporation technique have been investigated. The effect of annealing was also studied for samples annealed at temperatures between 300 degrees C and 500 degrees C. X-ray diffraction, energy dispersive X-ray analysis and scanning electron microscopy have been used for structural characterization. It was reported that increase of annealing temperature results with better crystallization and chemical composition...

Citation Formats

H. H. Gullu, İ. CANDAN, E. COŞKUN, and M. Parlak, “Investigation of structural and optical parameters of Cu-Ag-In-Se thin films deposited by thermal evaporation method,” OPTIK, pp. 1578–1583, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34667.