Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry

Date

2013-02-05

Author

IŞIK, MEHMET
Hasanlı, Nızamı
Turan, Raşit

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Spectroscopic ellipsometry measurements were carried out on Tl2GaInS4 layered crystals for orientations of electric field vector, parallel (E//c*) and perpendicular (E perpendicular to c*) to optical axis c*. The measurements were performed in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary components of the pseudodielectric function, pseudorefractive index and pseudoextinction coefficient were calculated from the analysis of ellipsometric data. The energies of interband transitions (critical points) have been found from the least-square fitting of the second derivative spectra of the pseudodielectric function. The results indicated five each interband transition structures for E//c* and E perpendicular to c* configurations. The obtained critical point energies were assigned tentatively to interband transitions using the available electronic energy band structure given in literature.

Subject Keywords

Semiconductors, Ellipsometry, Refractive index

URI

https://hdl.handle.net/11511/46103

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2012.09.103

Collections

Department of Physics, Article

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Citation Formats

M. IŞIK, N. Hasanlı, and R. Turan, “Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 179–183, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46103.