Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry
Date
2013-02-05
Author
IŞIK, MEHMET
Hasanlı, Nızamı
Turan, Raşit
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
160
views
0
downloads
Cite This
Spectroscopic ellipsometry measurements were carried out on Tl2GaInS4 layered crystals for orientations of electric field vector, parallel (E//c*) and perpendicular (E perpendicular to c*) to optical axis c*. The measurements were performed in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary components of the pseudodielectric function, pseudorefractive index and pseudoextinction coefficient were calculated from the analysis of ellipsometric data. The energies of interband transitions (critical points) have been found from the least-square fitting of the second derivative spectra of the pseudodielectric function. The results indicated five each interband transition structures for E//c* and E perpendicular to c* configurations. The obtained critical point energies were assigned tentatively to interband transitions using the available electronic energy band structure given in literature.
Subject Keywords
Semiconductors
,
Ellipsometry
,
Refractive index
URI
https://hdl.handle.net/11511/46103
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
DOI
https://doi.org/10.1016/j.jallcom.2012.09.103
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals
IŞIK, MEHMET; Hasanlı, Nızamı; Turan, Raşit (2012-11-01)
Spectroscopic ellipsometry measurements on TlGaSe2, TlGaS2 and TlInS2 layered crystals were carried out on the layer-plane (0 0 1) surfaces, which are perpendicular to the optic axis c*, in the 1.2- 6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were found as a result of analysis of ellipsometric data. The structures of critical points in the above-band gap energy range have been char...
Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals
Hasanlı, Nızamı (2011-01-01)
The optical properties of TlGaS2, TlGaSe2, and TlInS2 crystals have been investigated through the transmission and reflection measurements at room temperature in the wavelength range of 400-1100 nm. These measurements allowed determination of spectral dependence of the refractive index for all crystals studied. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: the oscillator energies, the dispe...
Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements
Isik, M.; Hasanlı, Nızamı (2012-06-15)
The optical properties of Tl2Ga2S3Se layered crystalline semiconductors were investigated from transmission, reflection and ellipsometric measurements. The experimental results of the room temperature transmission and reflection measurements performed in the wavelength range of 400-1100 nm showed the presence of both indirect and direct transitions in the band structure of the crystals with 2.38 and 2.62 eV band gap energies.
Dielectric functions and interband critical points of anisotropic chain structured TlSe single crystals
IŞIK, MEHMET; Hasanlı, Nızamı (2012-10-15)
Spectroscopic ellipsometry measurements were carried out on TlSe single crystals for orientations of electric field, parallel (E parallel to c), and perpendicular (E perpendicular to c) to optic axis c. The experiments were performed in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were calculated from the analysis of ellipsometric data under the light of ambient-substrate op...
Optical properties of Tl2In2Se3S layered single crystals
Güler, Işıkhan; Hasanlı, Nızamı (2010-01-01)
The optical properties of Tl2In2Se3S layered single crystals have been analyzed using transmission and reflection measurements in the wavelength region between 500 and 1100 nm. The optical indirect transitions with a band gap energy of 1.96 eV and direct transitions with a band gap energy of 2.16 eV were determined from analysis of absorption data at room temperature. Dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dis...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. IŞIK, N. Hasanlı, and R. Turan, “Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry,”
JOURNAL OF ALLOYS AND COMPOUNDS
, pp. 179–183, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46103.