Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry

Date

2013-02-05

Author

IŞIK, MEHMET
Hasanlı, Nızamı
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

172
views

0
downloads

Spectroscopic ellipsometry measurements were carried out on Tl2GaInS4 layered crystals for orientations of electric field vector, parallel (E//c*) and perpendicular (E perpendicular to c*) to optical axis c*. The measurements were performed in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary components of the pseudodielectric function, pseudorefractive index and pseudoextinction coefficient were calculated from the analysis of ellipsometric data. The energies of interband transitions (critical points) have been found from the least-square fitting of the second derivative spectra of the pseudodielectric function. The results indicated five each interband transition structures for E//c* and E perpendicular to c* configurations. The obtained critical point energies were assigned tentatively to interband transitions using the available electronic energy band structure given in literature.

Subject Keywords

Semiconductors, Ellipsometry, Refractive index

URI

https://hdl.handle.net/11511/46103

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2012.09.103

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals IŞIK, MEHMET; Hasanlı, Nızamı; Turan, Raşit (2012-11-01) Spectroscopic ellipsometry measurements on TlGaSe2, TlGaS2 and TlInS2 layered crystals were carried out on the layer-plane (0 0 1) surfaces, which are perpendicular to the optic axis c*, in the 1.2- 6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were found as a result of analysis of ellipsometric data. The structures of critical points in the above-band gap energy range have been char...
Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals Hasanlı, Nızamı (2011-01-01) The optical properties of TlGaS2, TlGaSe2, and TlInS2 crystals have been investigated through the transmission and reflection measurements at room temperature in the wavelength range of 400-1100 nm. These measurements allowed determination of spectral dependence of the refractive index for all crystals studied. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: the oscillator energies, the dispe...
Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements Isik, M.; Hasanlı, Nızamı (2012-06-15) The optical properties of Tl2Ga2S3Se layered crystalline semiconductors were investigated from transmission, reflection and ellipsometric measurements. The experimental results of the room temperature transmission and reflection measurements performed in the wavelength range of 400-1100 nm showed the presence of both indirect and direct transitions in the band structure of the crystals with 2.38 and 2.62 eV band gap energies.
Dielectric functions and interband critical points of anisotropic chain structured TlSe single crystals IŞIK, MEHMET; Hasanlı, Nızamı (2012-10-15) Spectroscopic ellipsometry measurements were carried out on TlSe single crystals for orientations of electric field, parallel (E parallel to c), and perpendicular (E perpendicular to c) to optic axis c. The experiments were performed in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were calculated from the analysis of ellipsometric data under the light of ambient-substrate op...
Optical properties of Tl2In2Se3S layered single crystals Güler, Işıkhan; Hasanlı, Nızamı (2010-01-01) The optical properties of Tl2In2Se3S layered single crystals have been analyzed using transmission and reflection measurements in the wavelength region between 500 and 1100 nm. The optical indirect transitions with a band gap energy of 1.96 eV and direct transitions with a band gap energy of 2.16 eV were determined from analysis of absorption data at room temperature. Dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dis...

Citation Formats

M. IŞIK, N. Hasanlı, and R. Turan, “Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 179–183, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46103.