All solution processed, nanowire enhanced ultraviolet photodetectors

Date

2013-01-28

Author

Afal, Aysegul
Coskun, Sahin
Ünalan, Hüsnü Emrah

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

141
views

0
downloads

We report on the fabrication and characterization of transparent and fully solution processed, nanowire based ultraviolet (UV) photodetectors with high responsivity. For this purpose, UV sensitive zinc oxide (ZnO) nanowires were grown hydrothermally on transparent electrodes formed by spray coated network of silver (Ag) nanowires. Fabricated UV photodetectors showed short recovery time, around 4 s, with a decent on/off ratio of 2600. Effect of in-situ annealing and nanowire length was investigated. Our design provides a simple and cost effective approach for the fabrication of high performance UV photodetectors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789757]

Subject Keywords

Physics and Astronomy (miscellaneous)

URI

https://hdl.handle.net/11511/49100

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.4789757

Collections

Department of Metallurgical and Materials Engineering, Article

Suggestions

OpenMETU
Core

GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION CHOI, YH; Beşikci, Cengiz; SUDHARSANAN, R; RAZEGHI, M (AIP Publishing, 1993-07-19) We report the growth of In1-xTlxSb, a new III-V alloy for long-wavelength infrared detector applications, by low-pressure metalorganic chemical vapor deposition. In1-xTlxSb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455-degrees-C. X-ray diffraction measurements showed resolved peaks of In1-xTlxSb and InSb films. Infrared absorption spectrum of In1-xTlxSb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In1-xTlxSb...
Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors Aslan, B; Turan, Raşit; Liu, HC; Baribeau, JM; Buchanan, M; Chow-Chong, P (Springer Science and Business Media LLC, 2004-01-01) This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunction internal photoemission infrared photodetectors. Results are compared with those of a single barrier sample which has nominally the same parameters. It is shown that the cut-off wavelength of the multi-barrier device depends on the operating temperature; therefore, it can be tuned to the desired region within the device capacity by changing the device temperature. The proof of concept device, which has tw...
Conducting and transparent single-wall carbon nanotube electrodes for polymer-fullerene solar cells Pasquier, AD; Ünalan, Hüsnü Emrah; Kanwal, A; Miller, S; Chhowalla, M (AIP Publishing, 2005-11-14) We describe the use of single-wall carbon nanotube (SWNT) thin films as transparent and conducting electrodes for hole collection in poly(hexyl)thiophene-[6-6]phenyl-C-61-butyric acid methyl ester (P3HT-PCBM) organic photovoltaics. We report a power conversion efficiency of 1%, with a fill factor of 0.3 and a short-circuit current of 6.5 mA/cm(2) under 100 mW/cm(2) polychromatic white light illumination measured in air. These values are comparatively higher than reference cells of similar thickness made on ...
Measurement of the inclusive 3-jet production differential cross section in proton-proton collisions at 7 TeV and determination of the strong coupling constant in the TeV range Khachatryan, V.; et. al. (Springer Science and Business Media LLC, 2015-05-01) This paper presents a measurement of the inclusive 3-jet production differential cross section at a proton-proton centre-of-mass energy of 7 TeV using data corresponding to an integrated luminosity of 5 fb(-1) collected with the CMS detector. The analysis is based on the three jets with the highest transverse momenta. The cross section is measured as a function of the invariant mass of the three jets in a range of 445-3270 GeV and in two bins of the maximum rapidity of the jets up to a value of 2. A compari...
Direct observation of the strength of plasmon-longitudinal optical phonon interaction in n-type GaAs Altan, Hakan; Matten, D.; Alfano, R. R. (AIP Publishing, 2006-07-31) The screening of longitudinal optical phonons by plasmons is investigated by time-resolved visible pump-mid-infrared probe transmission measurements in a series of light to highly doped n-type GaAs wafers. The reduced relaxation of photogenerated carriers is strongly correlated to the coupling between longitudinal optical phonons and background plasmons as suggested by the variation of the phonon strength over the doping range. The critical plasmon density at which the optical phonons were effectively scree...

Citation Formats

A. Afal, S. Coskun, and H. E. Ünalan, “All solution processed, nanowire enhanced ultraviolet photodetectors,” APPLIED PHYSICS LETTERS, pp. 0–0, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49100.