Temperature dependence of the Raman-active phonon frequencies in indium sulfide

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Date

1999-01-01

Author

Hasanlı, Nızamı
Aydinli, A
Yilmaz, I

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The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the A(g) intralayer optical modes show that Raman frequency shift results from the change of harmonic frequency with volume expansion and anharmonic coupling to phonons of other branches. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes.

Subject Keywords

Inelastic light scattering, Optical properties, Semiconductors

URI

https://hdl.handle.net/11511/46914

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/s0038-1098(99)00062-9

Collections

Department of Physics, Article

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Citation Formats

N. Hasanlı, A. Aydinli, and I. Yilmaz, “Temperature dependence of the Raman-active phonon frequencies in indium sulfide,” SOLID STATE COMMUNICATIONS, pp. 231–236, 1999, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46914.