Temperature dependence of the first-order Raman scattering in GaS layered crystal (vol 116, pg 147, 2000)

Date

2001-01-01

Author

Hasanlı, Nızamı
Ozkan, H
Kocabas, C

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The temperature dependence (15±293 K) of the six Raman-active mode frequencies and linewitdhs in gallium sulÆde hasbeen measured in the frequency range from 15 to 380 cm21. We observed softening and broadening of the optical phonon lineswith increasing temperature. Comparison between the experimental data and theories of the shift and broadening of theinterlayer and intralayer phonon lines during the heating of the crystal showed that the experimental dependencies can beexplained by the contributions from thermal expansion and lattice anharmonicity. The pure-temperature contribution (phonon±phonon coupling) is due to three- and four-phonon processes.

Subject Keywords

Light-scattering, Optical phonons

URI

https://hdl.handle.net/11511/44006

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/s0038-1098(00)00478-6

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Department of Physics, Article

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Temperature dependence of the first-order Raman scattering in GaS layered crystals Hasanlı, Nızamı; Ozkan, H; Kocabas, C (2000-01-01) The temperature dependence (15-293 K) of the six Raman-active mode frequencies and linewidths in gallium sulfide has been measured in the frequency range from 15 to 380 cm(-1). We observed softening and broadening of the optical phonon lines with increasing temperature. Comparison between the experimental data and theories of the shift and broadening of the interlayer and intralayer phonon lines during the heating of the crystal showed that the experimental dependencies can be explained by the contributions...
Temperature dependence of the Raman-active phonon frequencies in indium sulfide Hasanlı, Nızamı; Aydinli, A; Yilmaz, I (1999-01-01) The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the A(g) intralayer optical modes show that Raman frequency shift results from the change of harmonic frequency with volume expansion and anharmonic coupling to phonons of other branches. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes.
Temperature-dependent Raman scattering spectra of epsilon-GaSe layered crystal Hasanlı, Nızamı; Ozkan, H; Kocabas, C (Elsevier BV, 2002-01-01) The temperature dependencies (15-300 K) of seven Raman-active mode frequencies and linewidths in layered gallium selenide have been measured in the frequency range from 10 to 320 cm(-1). We observed softening and broadening of the optical phonon lines with increasing temperature. Comparison between the experimental data and theories of the shift and broadening of the intralayer phonon lines during heating of the crystal showed that the experimental dependencies can be explained by the contributions from the...
Temperature dependence of Raman-active modes of TIGaS2 layered crystals: An anharmonicity study Yuksek, N.s.; Hasanlı, Nızamı; Ozkan, H.; Aydinli, A. (2004-08-01) The temperature dependence (16 - 300 K) of unpolarized Raman spectra from TIGaS2 layered crystals was measured in the frequency range of 10 - 400 cm-1. The analysis of the experimental data showed that the temperature dependencies of the phonon frequencies and linewidths were well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupling) was found to be due to three-phonon processes. The present work demonstrates that th...
Anharmonic line shift and linewidth of the Raman modes in GaS0.75Se0.25 layered crystals Hasanlı, Nızamı (Wiley, 2002-11-01) The frequencies and linewidths of five Raman-active modes in a GaS0.75Se0.25 layered crystal have been measured in the 10-300 K temperature range and in the 10-380 cm(-1) frequency region. We observed softening and broadening of the optical phonon lines with increasing temperature. The analysis of the experimental data showed that the temperature dependencies of frequencies and linewidths are well described by considering the contributions from thermal expansion and lattice anharmonicity. The purely anharmo...

Citation Formats

N. Hasanlı, H. Ozkan, and C. Kocabas, “Temperature dependence of the first-order Raman scattering in GaS layered crystal (vol 116, pg 147, 2000),” SOLID STATE COMMUNICATIONS, pp. 393–394, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44006.