High-x InP/InxGa1-xAs quantum well infrared photodetector

Quantum well infrared photodetector (QWIP) technology is still the only thermal imaging sensor technology providing excellent pixel operability, uniformity and stability together with low production cost and insignificant 1/f noise. The main bottleneck of the standard QWIP technology is the low quantum efficiency and device gain inhibiting the utilization of the sensor for low background and/or high frame rate applications. This manuscript reports unusually high quantum efficiency observed in mid-wavelength infrared (MWIR) QWIPs constructed with solid-source molecular beam epitaxy grown thirty In0.83Ga0.17As quantum wells sandwiched between InP and GaInP barriers. Large area (300 x 300 mu m(2)) bound-to-continuum detectors with similar to 5.7 pm cutoff wavelength exhibited very broad (Delta lambda/lambda p = similar to 40%) responsivity spectrum together with impressively high peak absorption quantum efficiency of similar to 20% and a 78 K peak specific detectivity above 1 x 10(11) cmHz(1/2) /W with f/2 optics in the absence of diffraction grating. Even higher signal-to-noise ratio was observed in grating free small area ( 20 x 20 mu m(2)) detectors hybridized to a fan-out substrate. Considering the expected improvements in the quantum efficiency by confining the responsivity spectrum to the narrower (and useful) wavelength region in the MWIR band and utilization of diffraction grating, the results presented in this manuscript have considerable potential to open the door to reshape the QWIP technology.


High speed QWIP FPAs on InP substrates
Eker, S. U.; Arslan, Y.; Beşikci, Cengiz (Elsevier BV, 2011-05-01)
Quantum well infrared photodetector (QWIP) technology has allowed the realization of low cost staring focal plane arrays (FPAs). However, AlGaAs/(In)GaAs QWIP FPAs suffer from low quantum and conversion efficiencies under high frame rate and/or low background conditions.
High Conversion Efficiency InP/InGaAs Strained Quantum Well Infrared Photodetector Focal Plane Array With 9.7 mu m Cut-Off for High-Speed Thermal Imaging
Eker, Suleyman Umut; Arslan, Yetkin; Onuk, Ahmet Emre; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2010-02-01)
InP/InGaAs material system is an alternative to AlGaAs/GaAs for long wavelength quantum well infrared photodetectors (QWIPs). We demonstrate a large format (640 x 512) QWIP focal plane array (FPA) constructed with the strained InP/InGaAs material system. The strain introduced to the structure through utilization of In0.48Ga0.52As (instead of In0.53Ga0.47As) as the quantum well material shifts the cut-off wavelength from similar to 8.5 to 9.7 mu m. The FPA fabricated with the 40-well epilayer structure yield...
Adaptive image enhancement based on clustering of wavelet coefficients for infrared sea surveillance systems
Kara, A. Onur; Okman, O. Erman; Aytac, Tayfun (Elsevier BV, 2011-09-01)
Most of the techniques developed for infrared (IR) image enhancement (IE) depend heavily on the scene, environmental conditions, and the properties of the imaging system. So, with a set of predefined scenario properties, a content-based IR-IE technique can be developed for better situational awareness. This study proposes an adaptive IR-IE technique based on clustering of wavelet coefficients of an image for sea surveillance systems. Discrete wavelet transform (DWT) of an image is computed and feature vecto...
QWIP focal plane arrays on InP substrates for single and dual band thermal imagers
Eker, S. U.; Arslan, Y.; Kaldirim, M.; Beşikci, Cengiz (Elsevier BV, 2009-11-01)
Alternative material systems on InP substrate provide certain advantages for mid-wavelength infrared (MWIR), long-wavelength infrared (LWIR) and dual band MWIR/LWIR quantum well infrared photodetector (QWIP) focal plane arrays (FPAs). While InP/InGaAs and InP/InGaAsP LWIR QWIPs provide much higher responsivity, when compared to the AlGaAs/CaAs QWIPs, AllnAs/InGaAs system facilitates completely lattice matched single band MWIR and dual band MWIR/LWIR FPAs.
Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array
Ozer, S; Cellek, OO; Beşikci, Cengiz (Elsevier BV, 2005-10-01)
We report the fabrication and characteristics of large format (640 x 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 x 10(7) electrons, yielded a mean noise equivalent temperature difference (NETD) of similar to 40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs,...
Citation Formats
C. Beşikci, “High-x InP/InxGa1-xAs quantum well infrared photodetector,” INFRARED PHYSICS & TECHNOLOGY, pp. 152–157, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47021.