Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Optoelectrochemical properties of the copolymer of 2,5-di(4-methylthiophen-2-yl)-1-(4-nitrophenyl)-1H-pyrrole monomer with 3,4-ethylenedioxythiophene
Date
2008-04-30
Author
AK, Metin
Tanyeli, Cihangir
Akhmedo, Dris M.
Toppare, Levent Kamil
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
258
views
0
downloads
Cite This
Copolymer of 2,5-di(4-methylthiophen-2-yl)-1-(4-nitrophenyl)-1H-pyrrole (MTNP) with 3,4-ethylene dioxythiophene (EDOT) was electro-chemically synthesized and characterized via cyclic voltammetry, Fourier Transform Infrared spectroscopy, Scanning Electron Microscopy, conductivity measurements. Spectroelectrochemical investigations showed that resulting copolymer film has distinct electrochromic properties. It has five different colors (dark purple, red, light grey, green, blue). At the neutral state m due to the pi-pi* transition was found to be 500 mn and E-g was calculated as 1.71 eV Double potential step chronoamperometry experiment shows that copolymer film has good stability, fast switching time (1.1 s) and high optical contrast (30%).
Subject Keywords
Materials Chemistry
,
Electronic, Optical and Magnetic Materials
,
Surfaces, Coatings and Films
,
Surfaces and Interfaces
,
Metals and Alloys
URI
https://hdl.handle.net/11511/39459
Journal
THIN SOLID FILMS
DOI
https://doi.org/10.1016/j.tsf.2008.01.013
Collections
Department of Chemistry, Article
Suggestions
OpenMETU
Core
Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals
Qasrawi, A. F.; Hasanlı, Nızamı (Wiley, 2007-09-01)
The optical properties of Bridgman method grown Ga2SeS crystals have been investigated by means of room-temperature transmittance and reflectance spectral analysis. The optical data have revealed direct and indirect allowed transition band gaps of 2.49 and 2.10 eV, respectively. The room-temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as...
Capacitance analyses of hydrogenated nanocrystalline silicon based thin film transistor
ANUTGAN, TAMİLA; ANUTGAN, MUSTAFA; Atilgan, Ismail; Katircioglu, Bayram (Elsevier BV, 2011-03-31)
The capacitance-voltage (C-V) measurements within 10(6)-10(-2) Hz frequency range were performed on the hydrogenated nanocrystalline silicon (nc-Si:H) bottom-gate thin film transistor (TFT) and metal-insulator-amorphous silicon (MIAS) structure, mechanically isolated from the same TFT. It was found that the conducting thin layer in nc-Si:H film expands the effective capacitor area beyond the electrode in the TFT structure, which complicates its C-V curves. Considering the TFT capacitance-frequency (C-F) cur...
Polysilicon thin films fabricated by solid phase crystallization using reformed crystallization annealing technique
Özmen, Özge Tüzün; Karaman, M.; Turan, Raşit (Elsevier BV, 2014-01-31)
In this work, a reformed crystallization annealing technique is presented for the solid phase crystallization (SPC) of amorphous silicon (a-Si) on SiNx-coated quartz substrate. This technique includes a two-step annealing process which consists of a low-temperature (475 degrees C) classical furnace annealing for nucleation of Si and a high-temperature (900 degrees C) grain growth process of polycrystalline silicon (poly-Si) during thermal annealing in classical tube furnace. The aim of this reformed two-ste...
Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure
Ozdemir, O; Atilgan, I; Akaoglu, B; Sel, K; Katircioglu, B (Elsevier BV, 2006-02-21)
A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under str...
Conducting polymers with benzothiadiazole and benzoselenadiazole units for biosensor applications
Emre, Fatma Bilge; Ekiz, Fulya; Balan, Abidin; Emre, Sinan; TİMUR, SUNA; Toppare, Levent Kamil (Elsevier BV, 2011-11-15)
Poly(4,7-di(2,3)-dihydrothienol[3,4-b][1,4]dioxin-5-yl-benzo[1,2,5]thiadiazole) (PBDT) and poly(4,7-di(2,3)-dihydrothienol[3,4-b][1,4]dioxin-5-yl-2,1,3-benzoselenadiazole) (PESeE) were electrochemically deposited on graphite electrodes and used as immobilization matrices for biosensing studies. After electrochemical deposition of the polymeric matrices, glucose oxidase (GOx) was immobilized on the modified electrodes as the model enzyme. In the biosensing studies, the decrease in oxygen level as a result of...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. AK, C. Tanyeli, D. M. Akhmedo, and L. K. Toppare, “Optoelectrochemical properties of the copolymer of 2,5-di(4-methylthiophen-2-yl)-1-(4-nitrophenyl)-1H-pyrrole monomer with 3,4-ethylenedioxythiophene,”
THIN SOLID FILMS
, pp. 4334–4341, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39459.