Molecular beam epitaxial growth of high quality InSb

Date

1994-12-26

Author

Michel, E.
Singh, G.
Slivken, S.
Beşikci, Cengiz
Bove, P.
Ferguson, I.
Razeghı, M.

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In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x‐ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.

Subject Keywords

Chemical-vapor-deposition, Heteroepitaxial growth, Gaas, Layers, Sı

URI

https://hdl.handle.net/11511/47598

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.112384

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

E. Michel et al., “Molecular beam epitaxial growth of high quality InSb,” APPLIED PHYSICS LETTERS, pp. 3338–3340, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47598.