Molecular beam epitaxial growth of high quality InSb

Michel, E.
Singh, G.
Slivken, S.
Beşikci, Cengiz
Bove, P.
Ferguson, I.
Razeghı, M.
In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x‐ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.


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Temel, Oğuzhan; Beşikci, Cengiz; Parlak, Mehmet; Department of Micro and Nanotechnology (2014)
Indium Gallium Arsenide (In0.53Ga0.47As) is a suitable compound semiconductor for photodetector applications in the Short Wavelength Infrared (SWIR) band with its ~1.7 µm cut-off wavelength. In this work, lattice-matched InxGa1-xAs compounds (x~0.53) were grown on InP (001) substrates by the molecular beam epitaxy (MBE) method. Unintentional doping level as low as 1.96E15 cm-3 was obtained in the In0.53Ga0.47As epilayers. The X-ray diffraction full width at half maximum values were as low as 45 arc-sec disp...
Molecular beam epitaxial growth and characterization of extended short wavelength infrared mercury cadmium telluride detectors
Şaşmaz, Emrah; Beşikci, Cengiz; Department of Electrical and Electronics Engineering (2017)
This thesis reports the growth, fabrication and characterization of extended short wavelength infrared (SWIR) mercury cadmium telluride (Hg1-xCdxTe) photodiodes with a cut off wavelength of 2.17 µm at room temperature. HgCdTe layers were grown on home-polished cadmium zinc telluride, CdZnTe, substrates by molecular beam epitaxy (MBE). Test arrays were fabricated in order to evaluate the electrical and optical characteristics of the photodiodes. Test array consists of mesa type pixels with 30 µm pitch. The t...
Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals
IŞIK, MEHMET; YILDIRIM, TACETTİN; Hasanlı, Nızamı (2015-07-01)
Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290-770 K. U glow curve exhibited two peaks with maximum temperatures of similar to 373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trap...
Helium diffraction study of pentacene films on Au(111)
ALBAYRAK, EROL; Danışman, Mehmet Fatih (2014-03-15)
Here we present a helium atom diffraction study of pentacene films on Au(1 1 1) surface prepared by supersonic molecular beam deposition. Though investigated parameter space was limited no significant difference between the films prepared by different deposition energies was observed. Completion of monolayer coverage was confirmed by simultaneous helium scattering and quartz crystal resonance frequency shift measurements during pentacene film growth on the gold electrode of a quartz resonator. Monolayer fil...
Measurement of the Isolated Prompt Photon Production Cross Section in pp Collisions at root s=7 TeV
Khachatryan, V.; et. al. (2011-02-01)
The differential cross section for the inclusive production of isolated prompt photons has been measured as a function of the photon transverse energy E-T(Gamma) in pp collisions at root s 7 TeV using data recorded by the CMS detector at the LHC. The data sample corresponds to an integrated luminosity of 2.9 pb(-1). Photons are required to have a pseudorapidity vertical bar eta(gamma)vertical bar 21 GeV, covering the kinematic region 0.006 < x(T) < 0.086. The measured cross section is found to be in agreem...
Citation Formats
E. Michel et al., “Molecular beam epitaxial growth of high quality InSb,” APPLIED PHYSICS LETTERS, pp. 3338–3340, 1994, Accessed: 00, 2020. [Online]. Available: