Show/Hide Menu
Hide/Show Apps
anonymousUser
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Frequently Asked Questions
Frequently Asked Questions
Browse
Browse
By Issue Date
By Issue Date
Authors
Authors
Titles
Titles
Subjects
Subjects
Communities & Collections
Communities & Collections
Molecular beam epitaxy growth of inp/ingaas structures for short wavelength infrared photodetectors
Download
index.pdf
Date
2014
Author
Temel, Oğuzhan
Metadata
Show full item record
Item Usage Stats
9
views
15
downloads
Indium Gallium Arsenide (In0.53Ga0.47As) is a suitable compound semiconductor for photodetector applications in the Short Wavelength Infrared (SWIR) band with its ~1.7 µm cut-off wavelength. In this work, lattice-matched InxGa1-xAs compounds (x~0.53) were grown on InP (001) substrates by the molecular beam epitaxy (MBE) method. Unintentional doping level as low as 1.96E15 cm-3 was obtained in the In0.53Ga0.47As epilayers. The X-ray diffraction full width at half maximum values were as low as 45 arc-sec displaying the high crystal quality of the epilayers. The device structures with the epilayers of n+InP/In0.53Ga0.47As/p+InP and n+InP/In0.53Ga0.47As/p+In0.52Al0.48As were grown, and their structural characterization was conducted. Test detectors with large area mesas (200x200 and 300x300 µm2) were fabricated with a non-optimized fabrication process for electrical and optical characterization. The aim of the characterization of the test detectors was to determine the material’s preliminary device performance. The peak responsivity of the test detectors was ~1 A/W at room temperature under 100 mV reverse bias. The corresponding quantum efficiency near the cut off wavelength is ~75%. The dark current of the test detectors under small reverse bias was dominated by the generation-recombination mechanism at room temperature. The dark current density of the test detectors with ~1.7 µm cut-off wavelength at 298 K (100 mV reverse bias) was 2.5 µA/cm2 with a fabrication process which has not been optimized yet.
Subject Keywords
Indium arsenide.
,
Gallium arsenide.
,
Optical detectors.
,
Infrared spectra.
,
Molecular beam epitaxy.
URI
http://etd.lib.metu.edu.tr/upload/12617005/index.pdf
https://hdl.handle.net/11511/23449
Collections
Graduate School of Natural and Applied Sciences, Thesis