Molecular beam epitaxial growth and characterization of extended short wavelength infrared mercury cadmium telluride detectors

Download

index.pdf

Date

2017

Author

Şaşmaz, Emrah

Metadata

Show full item record

Item Usage Stats

357
views

166
downloads

This thesis reports the growth, fabrication and characterization of extended short wavelength infrared (SWIR) mercury cadmium telluride (Hg1-xCdxTe) photodiodes with a cut off wavelength of 2.17 µm at room temperature. HgCdTe layers were grown on home-polished cadmium zinc telluride, CdZnTe, substrates by molecular beam epitaxy (MBE). Test arrays were fabricated in order to evaluate the electrical and optical characteristics of the photodiodes. Test array consists of mesa type pixels with 30 µm pitch. The test array was hybridized with silicon fan-out with flip-chip bonder. Electrical and optical characterization performed on 28x28 µm2 detectors yielded a room temperature dark current density of 100 µA/cm2 which is diffusion limited. The peak responsivity of the test diodes without anti-reflection coating is 1.0 A/W corresponding to a quantum efficiency of 62%. Dark current limited peak detectivity of the detectors is 1.17x10^11 Jones at room temperature. Deep level transient spectroscopy (DLTS) measurements were performed on the detectors in order to identify the performance limiting material characteristics. DLTS measurements yielded a hole trap with activation energy of 267 meV, capture cross section of 2.0x10^-17 cm2 and trap density of 3x10^13 cm-3. The trap does not display extended defect characteristics suggesting that it originates from isolated defects in the material

Subject Keywords

Mercury cadmium tellurides., Molecular beam epitaxy., Infrared detectors.

URI

http://etd.lib.metu.edu.tr/upload/12621431/index.pdf
https://hdl.handle.net/11511/26804

Collections

Graduate School of Natural and Applied Sciences, Thesis

Suggestions

OpenMETU
Core

Molecular beam epitaxy growth of inp/ingaas structures for short wavelength infrared photodetectors Temel, Oğuzhan; Beşikci, Cengiz; Parlak, Mehmet; Department of Micro and Nanotechnology (2014) Indium Gallium Arsenide (In0.53Ga0.47As) is a suitable compound semiconductor for photodetector applications in the Short Wavelength Infrared (SWIR) band with its ~1.7 µm cut-off wavelength. In this work, lattice-matched InxGa1-xAs compounds (x~0.53) were grown on InP (001) substrates by the molecular beam epitaxy (MBE) method. Unintentional doping level as low as 1.96E15 cm-3 was obtained in the In0.53Ga0.47As epilayers. The X-ray diffraction full width at half maximum values were as low as 45 arc-sec disp...
Development of high performance long wavelength infrared HgCdTe focal plane arrays Barutçu, Berna; Beşikci, Cengiz; Department of Electrical and Electronics Engineering (2019) This thesis study reports the characterization of long wavelength infrared (LWIR) HgCdTe photovoltaic detectors with the p on n structure and 9.5 μm cut-off wavelength grown by molecular beam epitaxy on CdZnTe substrates and fabricated with different passivation processes. The characterization study was conducted at both pixel and focal plane array (FPA) levels. While the detectors exhibit diffusion dominated dark current at temperatures at and above 130 K under reverse bias voltages typically used in imagi...
Photo-transferred thermoluminescence of shallow traps in beta-irradiated BeO ceramics Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2017-07-01) Photo-transferred thermoluminescence signals from beryllium oxide (BeO) ceramics were measured in the low temperature range of 10-300 K. Samples irradiated at room temperature using a Sr-90/Y-19 beta source were cooled down to 10 K and trapped charges were photo-transferred at this low temperature using the light from a high power blue LED emitting at similar to 470 nm (2.6 eV). Thermoluminescence glow curve recorded at 0.2 K/s heating rate exhibited three peaks around 90, 160 and 185 K. The analyses of the...
High performance near/short wavelength infrared megapixel InGaAs focal plane array fabrication development and new design proposals Karaca, Utku; Kocaman, Serdar; Department of Electrical and Electronics Engineering (2018) In0.53Ga0.47As is the most appropriate material system for Short Wavelength Infrared (SWIR) detection at ~1.7 μm cutoff wavelength with its relatively lower cost and high performance. Ultra-low dark current (~ nA/cm2) has been recently demonstrated in InGaAs photodetectors with planar type process by eliminating surface leakage current. Here, a fabrication procedure for planar InGaAs photodetectors with unique pixel isolation methods has been developed and ~10 nA/cm2 dark current density levels were obtaine...
Heat-damage assessment of carbon-fiber-reinforced polymer composites by diffuse reflectance infrared spectroscopy Dara, IH; Ankara, A; Akovali, G; Suzer, S (2005-05-15) Diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy was used to assess the effects of heat damage on carbon-fiber-reinforced polymer composites. Moisture-saturated graphite-epoxy laminates with a quasi-isotropic lay-up were heat-damaged above their upper service temperatures. The loss of matrix-dominated mechanical properties due to heat exposure was investigated in the laboratory under environmental testing conditions with mechanical tests, ultrasonic C-scanning, and DRIFT spectroscopy. The...

Citation Formats

E. Şaşmaz, “Molecular beam epitaxial growth and characterization of extended short wavelength infrared mercury cadmium telluride detectors,” M.S. - Master of Science, Middle East Technical University, 2017.