Effects of annealing on structural and morphological properties of e-beam evaporated AgGaSe2 thin films

Parlak, Mehmet
Polycrystalline AgGaSe2 thin films were deposited by using single crystalline powder of AgGaSe2 grown by vertical Bridgman-Stockbarger technique. Post-annealing effect on the structural and morphological properties of the deposited films were studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDXA) measurements. XRD analysis showed that as-grown films were in amorphous structure, whereas annealing between 300 and 600 degrees C resulted in polycrystalline structure. At low annealing temperature, they were composed of Ag, Ga2Se3, GaSe, and AgGaSe2 phases but with increasing annealing temperature AgGaSe2 was becoming the dominant phase. In the as-grown form, the film surface had large agglomerations of Ag as determined by EDXA analysis and they disappeared because of the triggered segregation of constituent elements with increasing annealing temperature. Detail analyses of chemical composition and bonding nature of the films were carried out by XPS survey. The phases of AgO, Ag, Ag2Se, AgGaSe2, Ga, Ga2O3, Ga2Se3, Se and SeO2 were identified at the surface (or near the surface) of AgGaSe2 thin films depending on the annealing temperature, and considerable changes in the phases were observed.


Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films
KARAAĞAÇ, HAKAN; Parlak, Mehmet (Elsevier BV, 2011-04-15)
Sputtering technique has been used for the deposition of AgGaSe2 thin films onto soda-lime glass substrates using sequential layer-by-layer deposition of GaSe and Ag thin films. The analysis of energy dispersive analysis of X-ray (EDXA) indicated a Ga-rich composition for as-grown samples and there was a pronounce effect of post-annealing on chemical composition of AgGaSe2 thin film. X-ray diffraction (XRD) measurements revealed that Ag metallic phase exists in the amorphous AgGaSe2 structure up to annealin...
Effects of microcompounding process parameters on the properties of ABS/polyamide-6 blends based nanocomposites
Oezkoc, Gueralp; Bayram, Göknur; Quaedflieg, Martin (Wiley, 2008-03-05)
Melt intercalation method was applied to produce acrylonitrile-butadiene-styrene/polyamide-6 (ABS/ PA6) blends based organoclay nanocomposites using a conical twin-screw microcompounder. The blend was compatibilized using a maleated olefinic copolymer. The effects of microcompounding conditions such as screw speed, screw rotation-mode (co- or counter-), and material parameters such as blend composition and clay loading level on the morphology of the blends, dispersibility of nanoparticles, and mechanical pr...
Structural characterization of polycrystalline Ag-In-Se thin films deposited by e-beam technique
Colakoglu, T.; Parlak, Mehmet (Elsevier BV, 2008-01-15)
The Ag-In-Se thin films were deposited by e-beam evaporation of the Ag3In5Se9 single crystal powder under high vacuum without intentional doping. Energy dispersive X-ray analysis (EDXA) showed the decreasing behavior of Se and Ag in the structure depending on the annealing. X-ray diffraction (XRD) analysis showed that as-grown films have amorphous structure while annealing the films under nitrogen environment at 200 degrees C transformed from the amorphous to polycrystalline structure. The crystallinity of ...
Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films
AYGÜN ÖZYÜZER, GÜLNUR; Cantas, Ayten; Simsek, Yilmaz; Turan, Raşit (Elsevier BV, 2011-06-30)
HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O-2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. Th...
Growth of pentacene on Ag(111) surface: A NEXAFS study
Pedio, M.; Doyle, B.; Mahne, N.; Giglia, A.; Borgatti, F.; Nannarone, S.; Henze, S. K. M.; Temirov, R.; Tautz, F. S.; Casalis, L.; Hudej, R.; Danışman, Mehmet Fatih; Nickel, B. (Elsevier BV, 2007-10-31)
Thin films of pentacene (C22H14) have become widely used in the field of organic electronics. Here films of C22H14 of thickness ranging from submonolayer to multilayer were thermally deposited on Ag(1 1 1) surface. The determination of molecular geometry in pentacene films on Ag(1 1 1) studied by X-ray absorption at different stages of growth up to one monolayer is presented.
Citation Formats
H. KARAAĞAÇ and M. Parlak, “Effects of annealing on structural and morphological properties of e-beam evaporated AgGaSe2 thin films,” APPLIED SURFACE SCIENCE, pp. 5999–6006, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47924.