Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films

Parlak, Mehmet
Sputtering technique has been used for the deposition of AgGaSe2 thin films onto soda-lime glass substrates using sequential layer-by-layer deposition of GaSe and Ag thin films. The analysis of energy dispersive analysis of X-ray (EDXA) indicated a Ga-rich composition for as-grown samples and there was a pronounce effect of post-annealing on chemical composition of AgGaSe2 thin film. X-ray diffraction (XRD) measurements revealed that Ag metallic phase exists in the amorphous AgGaSe2 structure up to annealing temperature 450 degrees C and then the structure turned to the single phase AgGaSe2 with the preferred orientation along (1 1 2) direction with the annealing temperature at 600 degrees C. The surface morphology of the samples was analyzed by scanning electron microscopy (SEM) measurements. The structural parameters related to chalcopyrite compounds have been calculated. Optical properties of AgGaSe2 thin films were studied by carrying out transmittance and reflectance measurements in the wavelength range of 325-1100nm at room temperature. The absorption coefficient and the band gap values for as-grown and annealed samples were evaluated as 1.55 and 1.77 eV, respectively. The crystal-field and spin-orbit splitting levels were resolved. These levels (2.03 and 2.30 eV) were also detected from the photoresponse measurements almost at the same energy values. As a result of the temperature dependent resistivity and mobility measurements in the temperature range of 100-430 K, it was found that the decrease in mobility and the increase in carrier concentration following to the increasing annealing temperature attributed to the structural defects (tetragonal distortion, vacancies and interstitials). (C) 2011 Elsevier B. V. All rights reserved.


Structural characterization of polycrystalline Ag-In-Se thin films deposited by e-beam technique
Colakoglu, T.; Parlak, Mehmet (Elsevier BV, 2008-01-15)
The Ag-In-Se thin films were deposited by e-beam evaporation of the Ag3In5Se9 single crystal powder under high vacuum without intentional doping. Energy dispersive X-ray analysis (EDXA) showed the decreasing behavior of Se and Ag in the structure depending on the annealing. X-ray diffraction (XRD) analysis showed that as-grown films have amorphous structure while annealing the films under nitrogen environment at 200 degrees C transformed from the amorphous to polycrystalline structure. The crystallinity of ...
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KALELİ, Murat; ÇOLAKOĞLU, TAHİR; Parlak, Mehmet (Elsevier BV, 2013-12-01)
In this study highly stoichiometric and monophase AgInSe2 thin films were prepared by selenization of Ag-InSe precursors and the effect of the annealing temperature on the structural, electrical and optical properties have been investigated. The Se incorporation during selenization process as a function of temperature and the compositions of the samples were determined by energy dispersive X-ray analysis (EDAX). As prepared and selenized films were characterized using X-ray diffraction (XRD), scanning elect...
Assessing effects of (3-aminopropyl) trimethoxysilane self-assembled layers on surface characteristics of organosilane-grafted moisture-crosslinked polyethylene substrate: A comparative study between chemical vapor deposition and plasma-facilitated in situ grafting methods
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Silane coupling agents can act as bonding intermediates at the interface of two dissimilar materials by altering surface properties. In this study, (3-aminopropyl) trimethoxysilane (APTMS) was used as a silane precursor for vapor-phase deposition on organosilane-grafted moisture-crosslinked polyethylene (Si-XLPE) substrate. Chemical vapor deposition (CVD) and plasma-facilitated in situ grafting methods (grafting-from and grafting-onto) were employed to graft APTMS, and the consequent effects on surface of S...
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Growth of pentacene on Ag(111) surface: A NEXAFS study
Pedio, M.; Doyle, B.; Mahne, N.; Giglia, A.; Borgatti, F.; Nannarone, S.; Henze, S. K. M.; Temirov, R.; Tautz, F. S.; Casalis, L.; Hudej, R.; Danışman, Mehmet Fatih; Nickel, B. (Elsevier BV, 2007-10-31)
Thin films of pentacene (C22H14) have become widely used in the field of organic electronics. Here films of C22H14 of thickness ranging from submonolayer to multilayer were thermally deposited on Ag(1 1 1) surface. The determination of molecular geometry in pentacene films on Ag(1 1 1) studied by X-ray absorption at different stages of growth up to one monolayer is presented.
Citation Formats
H. KARAAĞAÇ and M. Parlak, “Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films,” APPLIED SURFACE SCIENCE, pp. 5731–5738, 2011, Accessed: 00, 2020. [Online]. Available: