Structural characterization of polycrystalline Ag-In-Se thin films deposited by e-beam technique

Date

2008-01-15

Author

Colakoglu, T.
Parlak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

192
views

0
downloads

The Ag-In-Se thin films were deposited by e-beam evaporation of the Ag3In5Se9 single crystal powder under high vacuum without intentional doping. Energy dispersive X-ray analysis (EDXA) showed the decreasing behavior of Se and Ag in the structure depending on the annealing. X-ray diffraction (XRD) analysis showed that as-grown films have amorphous structure while annealing the films under nitrogen environment at 200 degrees C transformed from the amorphous to polycrystalline structure. The crystallinity of the films improved as annealing temperature increases up to 400 degrees C by 100 degrees C-step. The polycrystalline films show mixed binary and ternary crystalline phases. Each phase was determined by comparing XRD patterns with complete data cards as Ag3In5Se9, AgInSe2, In4Se3, In2Se3, InSe, Se-6 and Se. The existence of Se segregation was supported by the formation of Se aggregates in crystalline phases of Se6 and Se. The X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analysis have been carried out in order to obtain detailed information about the atomic composition, chemical states and morphology of the thin film surface. The decomposition of In 4d, Se 3d and Ag 3d photoelectron peaks revealed the existence of In-In, In-Se, In-Ag, Se-Se and Ag-Ag bondings in as-grown thin films. After annealing the thin films at different temperatures, the concentration of In-Se and In-Ag bonds decreases significantly, which results in an In-rich, but Ag- and Se-deficient thin film structure. The roughness of the film surface as a result of application of post-annealing in between 200 and 400 degrees C monitored by AFM technique was observed to change from 1.81 to 22.89 nm.

Subject Keywords

Surfaces, Coatings and Films

URI

https://hdl.handle.net/11511/48611

Journal

APPLIED SURFACE SCIENCE

DOI

https://doi.org/10.1016/j.apsusc.2007.07.092

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Production and characterization of layer by layer sputtered single-phase AgInSe2 thin film by thermal selenization KALELİ, Murat; ÇOLAKOĞLU, TAHİR; Parlak, Mehmet (Elsevier BV, 2013-12-01) In this study highly stoichiometric and monophase AgInSe2 thin films were prepared by selenization of Ag-InSe precursors and the effect of the annealing temperature on the structural, electrical and optical properties have been investigated. The Se incorporation during selenization process as a function of temperature and the compositions of the samples were determined by energy dispersive X-ray analysis (EDAX). As prepared and selenized films were characterized using X-ray diffraction (XRD), scanning elect...
Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films KARAAĞAÇ, HAKAN; Parlak, Mehmet (Elsevier BV, 2011-04-15) Sputtering technique has been used for the deposition of AgGaSe2 thin films onto soda-lime glass substrates using sequential layer-by-layer deposition of GaSe and Ag thin films. The analysis of energy dispersive analysis of X-ray (EDXA) indicated a Ga-rich composition for as-grown samples and there was a pronounce effect of post-annealing on chemical composition of AgGaSe2 thin film. X-ray diffraction (XRD) measurements revealed that Ag metallic phase exists in the amorphous AgGaSe2 structure up to annealin...
Effects of annealing on structural and morphological properties of e-beam evaporated AgGaSe2 thin films KARAAĞAÇ, HAKAN; Parlak, Mehmet (Elsevier BV, 2009-03-15) Polycrystalline AgGaSe2 thin films were deposited by using single crystalline powder of AgGaSe2 grown by vertical Bridgman-Stockbarger technique. Post-annealing effect on the structural and morphological properties of the deposited films were studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDXA) measurements. XRD analysis showed that as-grown films were in amorphous structure, whereas annealing ...
Optimization of n(+) nc-Si:H and a-SiNx:H layers for their application in nc-Si:H TFT ANUTGAN, TAMİLA; Anutgan, Mustafa; Atilgan, Ismail; Katircioglu, Bayram (Elsevier BV, 2011-02-25) The n-type doped silicon thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) technique at high and low H-2 dilutions. High H-2 dilution resulted in n(+) nanocrystalline silicon films (n(+) nc-Si:H) with the lower resistivity (rho similar to 0.7 Omega cm) compared to that of doped amorphous silicon films (similar to 900 0 cm) grown at low H-2 dilution. The change of the lateral rho of n(+) nc-Si:H films was measured by reducing the film thickness via gradual reactive ion etching. T...
Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition KARAMAT, SHUMAİLA; Sonusen, S.; ÇELİK, ÜMİT; UYSALLI, YİĞİT; Oral, Ahmet (Elsevier BV, 2016-04-15) In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH),...

Citation Formats

T. Colakoglu and M. Parlak, “Structural characterization of polycrystalline Ag-In-Se thin films deposited by e-beam technique,” APPLIED SURFACE SCIENCE, pp. 1569–1577, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48611.