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Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire
Date
2006-06-01
Author
Ghosh, Sandip
Misra, Pranob
Grahn, Holger T.
İmer, Muhsine Bilge
Nakamura, Shuji
DenBaars, Steven P.
Speck, James S.
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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We have used polarized photoreflectance (PR) spectroscopy to study [1120]-oriented A-plane GaN films on R-plane sapphire substrates. For this type of films, the c-axis of GaN lies in the film plane. When the probe beam is polarized perpendicular to the c-axis, we observe a single feature in the PR spectrum, while two features at higher energies are observed for parallel polarization. Comparing the transition energies with the ones obtained by electronic band-structure calculations, we identify the observed PR spectral features as the three possible transitions around the fundamental band gap of GaN. However in comparison to unstrained GaN, their polarization properties and energies have been significantly modified by the inplane anisotropic strain in the film. Finally, we can also determine the individual in-plane anisotropic strain components.
Subject Keywords
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/48139
Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
DOI
https://doi.org/10.1002/pssb.200565297
Collections
Department of Metallurgical and Materials Engineering, Article
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S. Ghosh et al., “Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire,”
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
, pp. 1441–1445, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48139.