Investigation of optical parameters of Ag-In-Se thin films deposited by e-beam technique

2008-07-15
ÇOLAKOĞLU, TAHİR
Parlak, Mehmet
ÖZDER, SERHAT
The optical properties of the Ag-In-Se (AlS) thin films deposited by e-beam technique were investigated by means of the optical transmittance measurements. The optical absorption coefficients of the films were found to vary from 10(3) to 10(5) cm(-1) over the wavelength range of 300-1100 nm. The real and imaginary parts of the refractive index and dielectric constant for the as-grown and annealed films in between 100 and 400 degrees C were evaluated by means of both envelope method (EM) and continuous wavelet transform (CWT) method and the results were in quite good agreement with each other. The refractive index, n, dispersion over the measured wavelength range was explained by applying single-oscillator model (SOM) and the related parameters were calculated. The optical absorption process for the AIS thin films was characterized by three direct transitions from three closely spaced valence bands to a single conduction band due to the splitting of the valence band under the influence of the tetragonal crystalline field and spin-orbit interaction. The direct optical band gap energy decreases as the annealing temperature increases because of the increase in the width of band tail states near valence-band edge caused by the Se segregation. The two distinct parameters of the quasicubic model; crystal-field splitting Delta(CF), and spin-orbit splitting, Delta(SO), were calculated for as-grown and annealed AlS thin films.
JOURNAL OF NON-CRYSTALLINE SOLIDS

Suggestions

Determination of the influence of TiO2 on the elastic properties of a mica based glass ceramic by ultrasonic velocity measurements
Gür, Cemil Hakan; Öztürk, Abdullah (Elsevier BV, 2005-11-15)
The influence of small amount (1 or 2 wt%) of TiO2 additions and crystallization heat treatment on the elastic properties of a mica based glass ceramic have been investigated by ultrasonic velocity measurements. The mica based glass ceramic was prepared through controlled crystallization of a glass in the SiO2, Al2O3, CaO, MgO, K2O and F system. Evidences of TiO2 acting as a nucleating agent in this system was demonstrated. The longitudinal and transversal wave velocities of the as-prepared glass and the mi...
Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices
Yilmaz, K.; Parlak, Mehmet; Ercelebi, C. (IOP Publishing, 2007-12-01)
In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost oh...
Theoretical investigation of intersubband nonlinear optical rectification in AlxlGa1-xlAs/GaAs/AlxrGa1-xrAs asymmetric rectangular quantum wells
Karabulut, Ibrahim; Atav, Uelfet; Safak, Haluk; Tomak, Mehmet (Wiley, 2007-09-01)
In this study, a theoretical investigation of intersubband nonlinear optical rectification in Alx1Ga1-x1As/ GaAs/AlxrGa1-xrAs asymmetric rectangular quantum wells is presented. The electronic states in the asymmetric rectangular quantum well are described within the framework of the envelope function approach including the effects of band nonparabolicity and the effective mass mismatch. The nonlinear optical rectification is calculated using the density matrix formalism. It is found that the nonlinear optic...
Kinetics of fcc-Al nanocrystallization in Al90Tb10 metallic glass
DEMIRTAS, T.; Kalay, Yunus Eren (Elsevier BV, 2013-10-15)
The crystallization kinetics of Al90Tb10 amorphous alloy were investigated by a combined study of differential scanning calorimetry (DSC), transmission electron microscopy (TEM), Cu-K alpha X-ray diffraction (XRD) analyses and microhardness measurements. Amorphous to fcc-Al transformation kinetics were descried through Johnson-Mehl-Avrami OMA) approach based on the isothermal DSC hold at 220 degrees C. XRD and TEM revealed the formation of highly populated (similar to 10(21) m(-3)) fcc-Al nanocrystals after...
Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode
Surucu, O. Bayrakli (Springer Science and Business Media LLC, 2019-11-01)
The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering technique from single target. The structural and morphological properties of GZO film were investigated by X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. Optical properties of the fil...
Citation Formats
T. ÇOLAKOĞLU, M. Parlak, and S. ÖZDER, “Investigation of optical parameters of Ag-In-Se thin films deposited by e-beam technique,” JOURNAL OF NON-CRYSTALLINE SOLIDS, pp. 3630–3636, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48448.