Demonstration of optical nonlinearity in InGaAsP/InP passive waveguides

Saeidi, Shayan
Rasekh, Payman
Awan, Kashif M.
Tugen, Alperen
Huttunen, Mikko J.
Dolgaleva, Ksenia
We report on the study of the third-order nonlinear optical interactions in InxGa1-xAsyP1-y/InP strip-loaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical interactions. We performed self-phase modulation, four-wave mixing and nonlinear absorption measurements at the pump wavelength 1568 nm in our waveguides. The nonlinear phase shift of up to 2.5 pi has been observed in self-phase modulation experiments. The measured value of the two-photon absorption coefficient alpha(2) was 19 cm/GW. The four-wave mixing conversion range, representing the wavelength difference between maximally separated signal and idler spectral components, was observed to be 45 nm. Our results indicate that InGaAsP has a high potential as a material platform for nonlinear photonic devices, provided that the operation wavelength range outside the two-photon absorption window is selected.


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Citation Formats
S. Saeidi, P. Rasekh, K. M. Awan, A. Tugen, M. J. Huttunen, and K. Dolgaleva, “Demonstration of optical nonlinearity in InGaAsP/InP passive waveguides,” OPTICAL MATERIALS, pp. 524–530, 2018, Accessed: 00, 2020. [Online]. Available: