Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor

Date

2003-02-01

Author

Jacob, AP
Myrberg, T
Friesel, M
Nur, O
Willander, M
Serincan, U
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

135
views

0
downloads

Effect of temperature and time of heat treatment on the distribution of ion-implanted nitrogen in poly Si0.65Ge0.35 gate MOS samples was studied. Secondary ion mass spectrometry (SIMS) was used for the qualitative analysis of the nitrogen distribution. Rapid thermal processing was carried out for a temperature range of 950-1070degreesC for the redistribution of ions. The nitrogen implantation doses were 5 x 10(14) cm(-2), 2 x 10(15) cm(-2) and 5 x 10(15) cm(-2), all with an implantation energy of 50 keV. For a uniform distribution of nitrogen in the SiO2 region, an optimal temperature at a well calibrated time must be applied and this depends on the implantation dose. For medium and high concentrations the optimal conditions were 1050degreesC and 15s, and 1070degreesC and 15s, respectively. A uniform nitrogen distribution could be obtained throughout the SiO2 film. Prolonged heat treatment can cause degradation of the oxide layer and movement of the nitrogen and oxygen into the channel and the poly-Si0.65Ge0.35 layer.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/48556

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DOI

https://doi.org/10.1016/s1369-8001(03)00069-6

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Transient and steady state photoelectronic analysis in TlInSe2 crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2011-08-01) The temperature and illumination effects on the transient and steady state photoconductivities of TlInSe2 crystals have been studied. Namely, two recombination centres located at 234 and at 94 meV and one trap center located at 173 meV were determined from the temperature-dependent steady state and transient photoconductivities, respectively. The illumination dependence of photoconductivity indicated the domination of sublinear and supralinear recombination mechanisms above and below 160 K, respectively. Th...
Thermally stimulated currents in n-InS single crystals Hasanlı, Nızamı; Yuksek, NS (Elsevier BV, 2003-03-24) Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.
Electrical conductivity of polypyrrole films at a temperature range of 70 K to 350 K Kaynak, A (Elsevier BV, 1998-01-01) The de conductivity of electrochemically synthesized polypyrrole films doped from light to intermediate levels with p-toluene sulfonic acid was measured in the temperature range of 77 to 300 K, using a modified four-probe rig. Plots of de conductivity vs. temperature were parameterized by fitting Mott's Variable Range Hopping conduction model. The localization length of localized electrons was assumed to be 3 Angstrom, which is approximately equal to the length of a pyrrole monomer. Mott parameters of polyp...
Mechanical and microstructural evaluations of hot formed titanium sheets by electrical resistance heating process Ozturk, Fahrettin; Ece, Remzi Ecmel; Polat, Naki; Koksal, Arif; Evis, Zafer; Polat, Aytekin (Elsevier BV, 2013-08-20) In this study, effect of temperature in the electrical resistance heating process on mechanical properties and microstructures of commercially pure titanium grade 2 (CP2) and Ti-6Al-4V (T64) alloy sheets was investigated. Sheets were successfully heated by the electric resistance heating process, and their mechanical properties and microstructures were evaluated. Ductilities of both materials were increased significantly after 400 degrees C. Results indicate that no significant change was observed in grain ...
Microstructural investigation of Cu2+ doped nanohydroxyapatites Evis, Zafer (Informa UK Limited, 2010-05-01) Pure and Cu2+ doped nanohydroxyapatites were synthesised by a precipitation method to investigate the effect of Cu2+ ions on the structure of hydroxyapatite (HA) and its thermal stability after the air sintering at 1100 degrees C. A small amount of CaO was observed in the Cu2+ doped HAs after the X-ray diffraction results. The addition of Cu2+ changed the hexagonal lattice parameters of the HA and resulted in smaller grain size after sintering at 1100 degrees C. The addition of Cu2+ ions into HA resulted in...

Citation Formats

A. Jacob et al., “Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 37–41, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48556.