Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor

Date

2003-02-01

Author

Jacob, AP
Myrberg, T
Friesel, M
Nur, O
Willander, M
Serincan, U
Turan, Raşit

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Effect of temperature and time of heat treatment on the distribution of ion-implanted nitrogen in poly Si0.65Ge0.35 gate MOS samples was studied. Secondary ion mass spectrometry (SIMS) was used for the qualitative analysis of the nitrogen distribution. Rapid thermal processing was carried out for a temperature range of 950-1070degreesC for the redistribution of ions. The nitrogen implantation doses were 5 x 10(14) cm(-2), 2 x 10(15) cm(-2) and 5 x 10(15) cm(-2), all with an implantation energy of 50 keV. For a uniform distribution of nitrogen in the SiO2 region, an optimal temperature at a well calibrated time must be applied and this depends on the implantation dose. For medium and high concentrations the optimal conditions were 1050degreesC and 15s, and 1070degreesC and 15s, respectively. A uniform nitrogen distribution could be obtained throughout the SiO2 film. Prolonged heat treatment can cause degradation of the oxide layer and movement of the nitrogen and oxygen into the channel and the poly-Si0.65Ge0.35 layer.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/48556

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DOI

https://doi.org/10.1016/s1369-8001(03)00069-6

Collections

Department of Physics, Article

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Citation Formats

A. Jacob et al., “Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 37–41, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48556.