Transient and steady state photoelectronic analysis in TlInSe2 crystals

Hasanlı, Nızamı
The temperature and illumination effects on the transient and steady state photoconductivities of TlInSe2 crystals have been studied. Namely, two recombination centres located at 234 and at 94 meV and one trap center located at 173 meV were determined from the temperature-dependent steady state and transient photoconductivities, respectively. The illumination dependence of photoconductivity indicated the domination of sublinear and supralinear recombination mechanisms above and below 160 K, respectively. The change in the recombination mechanism is attributed to the exchange of roles between the linear recombination at the surface and trapping centres in the crystal, which become dominant as temperature decreases. The transient photoconductivity measurement allowed the determination of the capture coefficient of traps for holes as 3.11 x 10(-22) cm(-2).


Electrical conductivity of polypyrrole films at a temperature range of 70 K to 350 K
Kaynak, A (Elsevier BV, 1998-01-01)
The de conductivity of electrochemically synthesized polypyrrole films doped from light to intermediate levels with p-toluene sulfonic acid was measured in the temperature range of 77 to 300 K, using a modified four-probe rig. Plots of de conductivity vs. temperature were parameterized by fitting Mott's Variable Range Hopping conduction model. The localization length of localized electrons was assumed to be 3 Angstrom, which is approximately equal to the length of a pyrrole monomer. Mott parameters of polyp...
Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals
Qasrawi, AF; Hasanlı, Nızamı (Elsevier BV, 2004-07-02)
Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respective...
Thermally stimulated currents in n-InS single crystals
Hasanlı, Nızamı; Yuksek, NS (Elsevier BV, 2003-03-24)
Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.
Crystal data and indirect optical transitions in Tl2InGaSe4 crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2008-06-03)
The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the tempera...
Tribological properties of MgO-CaO-SiO2-P2O5-F-based glass-ceramic for dental applications
Park, Jongee; Öztürk, Abdullah (Elsevier BV, 2007-04-01)
Microhardness and tribological behavior of a glass-ceramic produced from a glass in the MgO-CaO-SiO2-P2O5-F system have been investigated with regard to the phases formed and microstructure developed during crystallization. The results of X-ray diffraction analysis indicated that apatite and wollastonite are the predominant crystalline phases. Scanning electron microscopy examination revealed that the wollastonite crystal content decreases and apatite crystal content increases as the depth distance from the...
Citation Formats
A. F. H. QASRAWI and N. Hasanlı, “Transient and steady state photoelectronic analysis in TlInSe2 crystals,” MATERIALS RESEARCH BULLETIN, pp. 1227–1230, 2011, Accessed: 00, 2020. [Online]. Available: