Transient and steady state photoelectronic analysis in TlInSe2 crystals

Date

2011-08-01

Author

QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı

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The temperature and illumination effects on the transient and steady state photoconductivities of TlInSe2 crystals have been studied. Namely, two recombination centres located at 234 and at 94 meV and one trap center located at 173 meV were determined from the temperature-dependent steady state and transient photoconductivities, respectively. The illumination dependence of photoconductivity indicated the domination of sublinear and supralinear recombination mechanisms above and below 160 K, respectively. The change in the recombination mechanism is attributed to the exchange of roles between the linear recombination at the surface and trapping centres in the crystal, which become dominant as temperature decreases. The transient photoconductivity measurement allowed the determination of the capture coefficient of traps for holes as 3.11 x 10(-22) cm(-2).

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/38492

Journal

MATERIALS RESEARCH BULLETIN

DOI

https://doi.org/10.1016/j.materresbull.2011.04.007

Collections

Department of Physics, Article

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Citation Formats

A. F. H. QASRAWI and N. Hasanlı, “Transient and steady state photoelectronic analysis in TlInSe2 crystals,” MATERIALS RESEARCH BULLETIN, pp. 1227–1230, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38492.