Comparative study of low-temperature photoluminescence and thermally stimulated current in quinary Tl4Ga3InSe6S2 layered crystals

Date

2016-04-01

Author

Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

178
views

0
downloads

Photoluminescence (PL) and thermally stimulated current (TSC) spectra of Tl4Ga3InSe6S2 layered crystals grown by Bridgman method have been studied in the wavelength region of 560-690 nm and the temperature range of 15-45 K (PL) and in the temperature region of 10-90 K (TSC). A broad PL band centered at 620 nm (2.00 eV) was observed at T=15 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.7-36.5 mW cm(-2) range. Radiative transitions from donor level located at 150 meV below the bottom of conduction band to shallow acceptor level located at 10 meV above the top of the valence band were suggested to be responsible for the observed PL band. TSC curve of Tl4Ga3InSe6S2 crystal exhibited one broad peak at about 41 K. The activation energy of trap level was found to be 11 meV. An energy level diagram showing transitions in the band gap of the crystal was plotted taking into account the results of PL and TSC measurements carried out below room temperature.

Subject Keywords

Semiconductors, Photoluminescence, Thermally stimulated current, Defects

URI

https://hdl.handle.net/11511/48845

Journal

JOURNAL OF LUMINESCENCE

DOI

https://doi.org/10.1016/j.jlumin.2015.11.036

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence Hasanlı, Nızamı (2015-10-01) Photoluminescence (PL) spectra of Tl4GaIn3Se2S6 layered crystals grown by the Bridgman method have been studied in the energy region of 2.02-2.35 eV and in the temperature range of 16-45 K. A broad PL band centered at 2.20 eV was observed at T = 16 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.1 to 149.9 mW cm(-2) range. Radiative transitions from shallow donor level located at 10 meV below the bottom of conduction band to moderately deep acceptor level...
Combined low-temperature photoluminescence and thermally stimulated current studies in Cu3In5S9 layered single crystals Hasanlı, Nızamı (2016-01-01) Photoluminescence (PL) and thermally stimulated current (TSC) spectra of Cu3In5S9 layered crystals grown by Bridgman method have been studied in the photon energy region of 1.20-1.65 eV and the temperature range of 15-70 K (PL) and in the temperature region of 10-130 K (TSC). A broad PL band centered at 1.484 eV was observed at T=15 K. Radiative transitions from shallow donor level located at 16 meV to moderately deep acceptor level located at 120 meV were suggested to be responsible for the observed PL ban...
Near-infrared photoluminescence and thermally stimulated current in Cu3Ga5Se9 layered crystals: A comparative study Hasanlı, Nızamı (2016-07-01) Near-infrared photoluminescence (PL) and thermally stimulated current (TSC) spectra of Cu3Ga5Se9 layered crystals grown by Bridgman method have been studied in the photon energy region of 1.35-1.46 eV and the temperature range of 15-115 K (PL) and 10-170 K (TSC). An infrared PL band centered at 1.42 eV was revealed at T = 15 K. Radiative transitions from shallow donor level placed at 20 meV to moderately deep acceptor level at 310 meV were suggested to be the reason of the observed PL band. TSC curve of Cu3...
Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor Güler, Işıkhan; Hasanlı, Nızamı; Turan, Raşit (2007-05-31) The emission band spectra of undoped T1(2)In(2)Se(3)S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T = 25 K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4mWcm(-2) range. Radiative transitions from shallow donor level located at 0.03 eV below the bottom of conduction band to deep acceptor level located at 0.23 ...
Low-temperature photoluminescence in CuIn5S8 single crystals Hasanlı, Nızamı (2016-06-01) Photoluminescence (PL) spectra of CuIn5S8 single crystals grown by Bridgman method have been studied in the wavelength region of 720-1020 nm and in the temperature range of 10-34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5- 60.2 mW cm(-2) range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at...

Citation Formats

N. Hasanlı, “Comparative study of low-temperature photoluminescence and thermally stimulated current in quinary Tl4Ga3InSe6S2 layered crystals,” JOURNAL OF LUMINESCENCE, pp. 34–38, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48845.