Transport studies of carbon-rich a-SiCx : H film through admittance and deep-level transient spectroscopy measurements

2006-07-01
Atilgan, I
Ozdemir, O
Akaoglu, B
Sel, K
Katircioglu, B
An intrinsic, carbon- rich a- SiCx: H thin film, prepared by the plasma- enhanced chemical vapour deposition ( PECVD) technique, has been studied mainly by AC admittance and small- pulse deep- level transient spectroscopy ( DLTS) measurements on an Al/ a- SiCx: H/ p- Si metal - insulator - semiconductor ( MIS) structure. The effects of measurement temperature, voltage and small- signal AC modulation frequency on the MIS capacitor are qualitatively and quantitatively described. The kinetics of charge injection from the silicon substrate into the a- SiCx: H film, as a function of temperature and voltage bias stresses, are reported. Nearest-neighbour and variable- range hopping mechanisms are considered. An activation energy of similar to 0.09 eV, and a density of states ( DOS) of about 10(19) cm(-3)/ eV were found. The value of the DOS is in agreement with the effective interface DOS of above 10(12) cm(-2)/ eV assessed by both capacitance and DLTS measurements. The frequency ( or temperature) dependence of the MIS capacitor over the whole DC voltage range is considered in detail. Single- and double- step carrier exchange mechanisms between the a- SiCx: H film and the silicon substrate, in the accumulation and depletion voltage regimes, respectively, are proposed.

Citation Formats
I. Atilgan, O. Ozdemir, B. Akaoglu, K. Sel, and B. Katircioglu, “Transport studies of carbon-rich a-SiCx : H film through admittance and deep-level transient spectroscopy measurements,” PHILOSOPHICAL MAGAZINE, vol. 86, no. 19, pp. 2771–2796, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68098.