Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode

Katircioglu, B.
Hydrogenated amorphous silicon nitride-based heterojunction pin diode was electroformed under sufficiently high forward bias stress leading to its instant nanocrystallization at room temperature. In order to investigate the origin of the accompanying bright visible light emission, current-voltage and electroluminescence (EL) characteristics of the electroformed diode were scanned over temperature. Electrical transport mechanism was analysed in the low, medium and high electric field regimes. Temperature and field dependence of thermal activation energy were discussed. EL characteristics were studied using the spectral energy distribution and the injection current dependence of its intensity. Thermal quenching data of EL and photoluminescence intensities were compared. Finally, the relationship between the electrical transport and luminescence phenomena was attempted to be interpreted within the frame of a self-consistent model.


Transport studies of carbon-rich a-SiCx : H film through admittance and deep-level transient spectroscopy measurements
Atilgan, I; Ozdemir, O; Akaoglu, B; Sel, K; Katircioglu, B (Informa UK Limited, 2006-07-01)
An intrinsic, carbon- rich a- SiCx: H thin film, prepared by the plasma- enhanced chemical vapour deposition ( PECVD) technique, has been studied mainly by AC admittance and small- pulse deep- level transient spectroscopy ( DLTS) measurements on an Al/ a- SiCx: H/ p- Si metal - insulator - semiconductor ( MIS) structure. The effects of measurement temperature, voltage and small- signal AC modulation frequency on the MIS capacitor are qualitatively and quantitatively described. The kinetics of charge injecti...
Crystallization and phase separation mechanism of silicon oxide thin films fabricated via e-beam evaporation of silicon monoxide
Gunduz, Deniz Cihan; Tankut, Aydin; Sedani, Salar; Karaman, Mehmet; Turan, Raşit (2015-04-29)
In this work, silicon oxide thin films were synthesized via e-beam evaporation of silicon monoxide. Subsequent annealing experiments were carried out to induce Si nanocrystals (Si NCs) formation. A broad range of annealing durations and temperatures were studied. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR) were employed to study the mechanism of phase separation in silicon oxide films and crystallization of Si. Raman spectroscopy results show...
Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2007-01-01)
Dark electrical conductivity and photoconductivity of Tl2InGaTe4 single crystals have been measured and analyzed in the temperature region 100-300 K. The dark electrical conductivity measurements revealed an intrinsic- or extrinsic-type of conductivity above or below 210 K, respectively. From intrinsic conductivity data analysis, the energy band gap of Tl2InGaTe4 crystals was determined as 0.85 eV. In the extrinsic region, the dark conductivity arises from a donor energy level located at 0.30 eV below the c...
Optoelectronic properties of Tl3InSe4 single crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2010-01-01)
The crystal structure, temperature-dependent electrical conductivity, Hall coefficient, current-voltage characteristics, absorption spectra and temperature- and illumination-dependent photoconductivity of Tl3InSe4 single crystals were investigated. Tl3InSe4 crystallises in a body-centred lattice with tetragonal symmetry and belongs to the space group [image omitted]. The crystals are extrinsic p-type semiconductors and exhibit a conductivity conversion from p- to n-type at a critical temperature, Tc, of 283...
Slip-flow heat transfer in microtubes with axial conduction and viscous dissipation - An extended Graetz problem
Cetin, Barbaros; Güvenç Yazıcıoğlu, Almıla; KAKAÇ, SADIK (Elsevier BV, 2009-09-01)
This study is an extension of the Graetz problem to include the rarefaction effect, viscous dissipation term and axial conduction with constant-wall-heat-flux thermal boundary condition. The energy equation is solved analytically by using general eigenfunction expansion. The temperature distribution and the local Nusselt number are determined in terms of confluent hypergeometric functions. The effects of the rarefaction, axial conduction and viscous dissipation on the local Nusselt number are discussed in t...
Citation Formats
M. ANUTGAN, T. ANUTGAN, İ. ATILGAN, and B. Katircioglu, “Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode,” PHILOSOPHICAL MAGAZINE, pp. 3332–3352, 2013, Accessed: 00, 2020. [Online]. Available: