Structural and electrical characterization of a-plane GaN grown on a-plane SiC

Date

2003-01-01

Author

Craven, MD
Chakraborty, A
İmer, Muhsine Bilge
Wu, F
Keller, S
Mishra, UK
Speck, JS
DenBaars, SP

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

164
views

0
downloads

Planar nonpolar (11 (2) over bar0) a-plane GaN thin films were grown on (11 (2) over bar0) a-plane 6H-SiC substrates via metalorganic chemical vapor deposition by depositing a high temperature AlN buffer layer prior to the epitaxial GaN growth. The orientation of the GaN film and AlN buffer layer directly match that of the SiC substrate, as determined by on- and off-axis X-ray diffraction measurements. The morphological evolution of GaN grown on the AlN buffer layers was investigated using atomic force microscopy. Microstrucrural characterization of the coalesced a-plane GaN films provided by plan-view transmission electron microscopy revealed threading dislocation and stacking fault densities of similar to3 x 10(10) cm(-2) and similar to7 x 10(5) cm(-1), respectively. Structural comparisons to a-plane GaN films grown on r-plane sapphire substrates are presented. Si-doped films were grown with a variety of Si/Ga ratios and electrically characterized using Hall effect measurements. A maximum Hall mobility of 109 cm(2)/Vs was attained at a carrier concentration of 1.8 x 10(19) cm(-3). (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subject Keywords

Condensed Matter Physics

URI

https://hdl.handle.net/11511/49082

DOI

https://doi.org/10.1002/pssc.200303449

Collections

Department of Metallurgical and Materials Engineering, Conference / Seminar

Suggestions

OpenMETU
Core

Transport studies of carbon-rich a-SiCx : H film through admittance and deep-level transient spectroscopy measurements Atilgan, I; Ozdemir, O; Akaoglu, B; Sel, K; Katircioglu, B (Informa UK Limited, 2006-07-01) An intrinsic, carbon- rich a- SiCx: H thin film, prepared by the plasma- enhanced chemical vapour deposition ( PECVD) technique, has been studied mainly by AC admittance and small- pulse deep- level transient spectroscopy ( DLTS) measurements on an Al/ a- SiCx: H/ p- Si metal - insulator - semiconductor ( MIS) structure. The effects of measurement temperature, voltage and small- signal AC modulation frequency on the MIS capacitor are qualitatively and quantitatively described. The kinetics of charge injecti...
Electronic and structural properties of a 4d perovskite: Cubic phase of SrZrO3 Mete, E; Shaltaf, R; Ellialtıoğlu, Süleyman Şinasi (American Physical Society (APS), 2003-07-15) First-principles density-functional calculations are performed within the local-density approximation to study the electronic properties of SrZrO3, an insulating 4d perovskite, in its high-temperature cubic phase, above 1400 K, as well as the generic 3d perovskite SrTiO3, which is also a d(o) insulator and cubic above 105 K, for comparison reasons. The energy bands, density of states, and charge-density distributions are obtained and a detailed comparison between their band structures is presented. The resu...
Structural and electronic properties of bamboo-like carbon nanostructure Erkoç, Şakir (Elsevier BV, 2006-01-01) The structural and electronic properties of bamboo-like carbon nanostructure have been investigated qualitatively by performing semi-empirical self-consistent-field molecular orbital calculations at the level of the PM3 method within the RHF formulation. It has been found that these structures are stable and endothermic. Bamboo-like carbon nanostructures resemble zigzag carbon nanotubes capped with a plane graphine sheet.
Structural and electrical properties of Cd doped InSe thin films Qasrawi, AF; Günal, İbrahim; Ercelebi, C (Wiley, 2000-01-01) Polycrystalline Cd doped InSe thin films were obtained by thermal co-evaporation of alpha -In2Se3 lumps and Cd onto glass substrates at a temperature of 150 degreesC. The films were annealed at 150 degrees and 200 degreesC. The films were found to contain around 46% In, 47% Se and 7% Cd in weight. The films exhibited p-type conductivity. The results of conductivity measurements have revealed that thermionic emission and variable range hopping are the two dominant conduction mechanisms, in the temperature ra...
Structural and dynamical properties of liquid Pd-Ag alloys Kart, HH; Tomak, Mehmet; Uludogan, M; Cagin, T (World Scientific Pub Co Pte Lt, 2004-06-30) Structural and dynamical properties of Pd, Ag pure liquid metals and especially PdxAg1-x, alloys are studied by the molecular dynamics simulation. The effects of temperature and concentration on the liquid properties of PdxAg1-x, are analyzed. Sutton-Chen (SC) and Quantum Sutton-Chen (Q-SC) many-body potentials are used as interatomic interactions. The calculated diffusion constants and viscosities are in good agreement with the available experimental data and theoretical calculations. The coefficients of A...

Citation Formats

M. Craven et al., “Structural and electrical characterization of a-plane GaN grown on a-plane SiC,” 2003, vol. 0, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49082.