Polysilicon thin films fabricated by solid phase crystallization using reformed crystallization annealing technique

Date

2014-01-31

Author

Özmen, Özge Tüzün
Karaman, M.
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

176
views

0
downloads

In this work, a reformed crystallization annealing technique is presented for the solid phase crystallization (SPC) of amorphous silicon (a-Si) on SiNx-coated quartz substrate. This technique includes a two-step annealing process which consists of a low-temperature (475 degrees C) classical furnace annealing for nucleation of Si and a high-temperature (900 degrees C) grain growth process of polycrystalline silicon (poly-Si) during thermal annealing in classical tube furnace. The aim of this reformed two-step annealing technique is reducing the long (up to 48 h) crystallization annealing duration of single step annealing at low temperatures (similar to 600 degrees C) while maintaining the film quality, as low-temperature single step annealing, by using reformed technique. Continuous p-type poly-Si film was formed on quartz substrate thanks to exodiffusion of boron, which was deposited prior to a-Si, through Si film by thermal annealing. The stress and degree of crystallinity of the p-type poly-Si were studied by the micro-Raman Spectroscopy. The crystallization fraction value of 95% was deduced for annealed samples at 900 degrees C, independent from crystallization technique. On the other hand, the Raman analysis points out that compressive stress was induced by increasing the annealing duration at 900 degrees C. X-ray diffraction (XRD) analysis reveals that the preferred crystallite orientation of the films, independent from crystallization temperature and substrates, is < 111 >. Additionally, the average crystallite size calculated from XRD patterns increases from 69 angstrom to 165 angstrom by using reformed two-step annealing instead of single step annealing at 900 degrees C for 90 min. The exodiffusion of boron into the silicon film was deduced from secondary ion mass spectrometry (SIMS) analysis and the p(+)/p graded boron profile was obtained, which may result higher carrier diffusion length and longer carrier life time. Finally, the annealing duration dramatically decrease to 9 h by using reformed two-step annealing technique instead of conventional single step annealing at 600 degrees C. The results show that reformed SPC annealing technique has major advantages by combining the lower annealing duration and high crystal quality. (C) 2013 Elsevier B. V. All rights reserved.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Metals and Alloys

URI

https://hdl.handle.net/11511/49303

Journal

THIN SOLID FILMS

DOI

https://doi.org/10.1016/j.tsf.2013.11.098

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate Ozmen, O. Tuzun; Karaman, M.; Sedani, S. H.; Sagban, H. M.; Turan, Raşit (Elsevier BV, 2019-11-01) Aluminium induced crystallization (AIC) technique can be used to form the high-quality and large-grained polycrystalline silicon (poly-Si) thin films, which are with the thickness of similar to 200 nm and used as a seed layer, on silicon nitride coated glass substrate. Thanks to aluminium metal in AIC process, the natural doping of AIC thin films is p(+) type (similar to 2 x 10(18) cm(-3)). On the other hand, recombination of carriers can be controlled by partial doping through the defects that may have adv...
Optoelectrochemical properties of the copolymer of 2,5-di(4-methylthiophen-2-yl)-1-(4-nitrophenyl)-1H-pyrrole monomer with 3,4-ethylenedioxythiophene AK, Metin; Tanyeli, Cihangir; Akhmedo, Dris M.; Toppare, Levent Kamil (Elsevier BV, 2008-04-30) Copolymer of 2,5-di(4-methylthiophen-2-yl)-1-(4-nitrophenyl)-1H-pyrrole (MTNP) with 3,4-ethylene dioxythiophene (EDOT) was electro-chemically synthesized and characterized via cyclic voltammetry, Fourier Transform Infrared spectroscopy, Scanning Electron Microscopy, conductivity measurements. Spectroelectrochemical investigations showed that resulting copolymer film has distinct electrochromic properties. It has five different colors (dark purple, red, light grey, green, blue). At the neutral state m due to...
Indium tin oxide thin films elaborated by sol-gel routes: The effect of oxalic acid addition on optoelectronic properties Kesim, Mehmet Tumerkan; Durucan, Caner (Elsevier BV, 2013-10-31) Single layer indium tin oxide (ITO) thin films were deposited on glass using modified sol-gel formulations. The coating sols were prepared using indium (InCl3 center dot 4H(2)O) and tin salts (SnCl4 center dot 5H(2)O). The stable sols were obtained using ethanol (C2H5OH) and acetylacetone (C5H8O2) as solvents and by the addition of oxalic acid dihydrate (C2H2O4 center dot 2H(2)O) in different amounts. The effect of oxalic acid content in the sol formulation and post-coating calcination treatment (in air at ...
Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure Ozdemir, O; Atilgan, I; Akaoglu, B; Sel, K; Katircioglu, B (Elsevier BV, 2006-02-21) A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under str...
Electrical and magnetic properties of Si ion implanted YBa2Cu3O7-delta thin films and microbridges Avci, I; Tepe, A; Serincan, U; Oktem, B; Turan, Raşit; Abukay, D (Elsevier BV, 2004-11-01) Fabrication of superconducting bilayer YBa2Cu3O7-delta (YBCO) thin film structure by Si ion implantation and properties of microbridge patterned on that are presented. YBCO thin film of 150 nm thickness was grown on single crystal (100) SrTiO3 substrate by inverted cylindrical magnetron sputtering. The sample was implanted with 100 keV, 1 X 10(16) Si ions/cm(2). Upon implantation with Si, the sample lost its electrical conductivity and diamagnetism while its crystalline structure was preserved after the ann...

Citation Formats

Ö. T. Özmen, M. Karaman, and R. Turan, “Polysilicon thin films fabricated by solid phase crystallization using reformed crystallization annealing technique,” THIN SOLID FILMS, pp. 181–187, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49303.