Indium tin oxide thin films elaborated by sol-gel routes: The effect of oxalic acid addition on optoelectronic properties

Date

2013-10-31

Author

Kesim, Mehmet Tumerkan
Durucan, Caner

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

186
views

0
downloads

Single layer indium tin oxide (ITO) thin films were deposited on glass using modified sol-gel formulations. The coating sols were prepared using indium (InCl3 center dot 4H(2)O) and tin salts (SnCl4 center dot 5H(2)O). The stable sols were obtained using ethanol (C2H5OH) and acetylacetone (C5H8O2) as solvents and by the addition of oxalic acid dihydrate (C2H2O4 center dot 2H(2)O) in different amounts. The effect of oxalic acid content in the sol formulation and post-coating calcination treatment (in air at 300-600 degrees C) on electrical/optical properties of ITO films have been reported. It was shown that film formation efficiency, surface coverage and homogeneity were all enhanced with oxalic acid addition. Oxalic acid modification also leads to a significant improvement in electrical conductivity without affecting the film thickness (45 +/- 3 nm). ITO films exhibiting high transparency (approximate to 93%, visible region) with a sheet resistance as low as 3.8 +/- 0.4 k Omega/sqr have been formed by employing coating sols with optimized oxalic acid amount. The mechanisms and factors affecting the functional performance of oxalic acid-modified films have been thoroughly discussed and related to the microstructural and chemical characteristic of the films achieved by oxalic acid addition. (C) 2013 Elsevier B. V. All rights reserved.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Metals and Alloys

URI

https://hdl.handle.net/11511/48030

Journal

THIN SOLID FILMS

DOI

https://doi.org/10.1016/j.tsf.2013.07.031

Collections

Department of Metallurgical and Materials Engineering, Article

Suggestions

OpenMETU
Core

Thickness and optical constant distributions of PECVD a-SiCx : H thin films along electrode radial direction Akaoglu, B; Atilgan, I; Katircioglu, B (Elsevier BV, 2003-08-01) Two sets of hydrogenated amorphous silicon carbide (a-SiCx:H) thin films were grown on glass and c-Si substrates by Plasma enhanced chemical vapor deposition (PECVD) technique at pressures of 0.5 and 0.1 Torr. The influence of the pressure on the distribution of thicknesses, refractive indices at 632.8 nm and optical gaps from the edge to the center of the bottom electrode of PECVD system is examined by transmission, single wavelength ellipsometry and Fourier transform infrared spectroscopy. A recently intr...
Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure Ozdemir, O; Atilgan, I; Akaoglu, B; Sel, K; Katircioglu, B (Elsevier BV, 2006-02-21) A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under str...
Polysilicon thin films fabricated by solid phase crystallization using reformed crystallization annealing technique Özmen, Özge Tüzün; Karaman, M.; Turan, Raşit (Elsevier BV, 2014-01-31) In this work, a reformed crystallization annealing technique is presented for the solid phase crystallization (SPC) of amorphous silicon (a-Si) on SiNx-coated quartz substrate. This technique includes a two-step annealing process which consists of a low-temperature (475 degrees C) classical furnace annealing for nucleation of Si and a high-temperature (900 degrees C) grain growth process of polycrystalline silicon (poly-Si) during thermal annealing in classical tube furnace. The aim of this reformed two-ste...
Indium tin oxide nanoparticles as anode for light-emitting diodes Çırpan, Ali (Wiley, 2006-02-15) Thin films of indium tin oxide (ITO) nanoparticles have been investigated as anode materials for polymer light-emitting diodes. A luminance efficiency (0.13 cd/ A), higher than that (0.09 cd/A) obtained in a control devices fabricated on conventional commercial ITO anodes were found. The thin films were made by spin coating of a suspension followed by annealing. The ITO nartoparticle films have a stable sheet resistance of 200 ohm/sq, and an optical transmittance greater than 86% over the range of 400-1000 ...
Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals Qasrawi, A. F.; Hasanlı, Nızamı (Wiley, 2007-09-01) The optical properties of Bridgman method grown Ga2SeS crystals have been investigated by means of room-temperature transmittance and reflectance spectral analysis. The optical data have revealed direct and indirect allowed transition band gaps of 2.49 and 2.10 eV, respectively. The room-temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as...

Citation Formats

M. T. Kesim and C. Durucan, “Indium tin oxide thin films elaborated by sol-gel routes: The effect of oxalic acid addition on optoelectronic properties,” THIN SOLID FILMS, pp. 56–63, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48030.