The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode

Güllü, Hasan Hüseyin
SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias current-voltage (I-V) measurements. The main diode parameters were calculated according to the thermionic emission (TE) model and they were found in an abnormal behavior with change in temperate in which zero-bias barrier height (Phi(B0)) increases and ideality factor (n) decreases with increasing temperature. Therefore, the total current flow though the junction was expressed by the Gaussian distribution (GD) of barrier height. The plot of Phi(B0) vs q/2kT showed the existence of inhomogeneous barrier formation and evidence for the application of Gaussian function to identify the distribution of low barrier height patches. The mean barrier height was found as 1.274 with the 0.166 eV standard deviation. From the modified Richardson plot, Richardson constant was calculated as 119.5A/cm(2)K(2) in very close agreement with the reported values. Additionally, the effects of the series resistance (R-s) were analyzed by using Cheung's function. Distribution of the interface states (D-it) were extracted from the I-V characteristics and found in increasing behavior with decreasing temperature.


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The effect of Ga/In ratio and annealing temperature on the nonlinear absorption behaviors in amorphous TlGaxIn(1-x)S2 (0 ≤ x ≤ 1) chalcogenide thin films
Ünlü, Bekir Asilcan; Karatay, Ahmet; Yüksek, Mustafa; Ünver, Hüseyin; Hasanlı, Nızamı; Elmali, Ayhan (Elsevier BV, 2020-08-01)
The amorphous semiconductor TlGaxIn(1-x)S2 (0 <= x <= 1) chalcogenide thin films were prepared with 70 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties of the films were studied by Z-scan technique. The energy band gap values were calculated by using linear absorption spectra. The effect of Ga/In ratio leads to increase 0.22 eV in band gap energy. To derive the transmission in open aperture Z-scan data, a theoretical model incorporating two photon and free carrier ab...
Citation Formats
H. H. Güllü and D. E. YILDIZ, “The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode,” JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, pp. 919–925, 2018, Accessed: 00, 2020. [Online]. Available: