Electroforming of Amorphous Silicon Nitride Heterojunction pin Visible Light Emitter

Date

2011-08-01

Author

ANUTGAN, MUSTAFA
ANUTGAN, TAMİLA
ATILGAN, İSMAİL
Katircioglu, Bayram

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The deposition parameters of doped hydrogenated nanocrystalline silicon grown by plasma-enhanced chemical vapor deposition were scanned to obtain highly conductive films. The optimized p(+) and n(+) nc-Si: H films were used as injecting layers in the fabrication of Si-rich hydrogenated amorphous silicon nitride (a-SiN(x) : H)-based heterojunction p(+) in(+) diode. The as-grown diode was subjected to a Joule-heating-assisted forming process (FP) via the application of a high electric field. The modifications in the luminescent, electrical, and structural properties of the diode subsequent to the FP were investigated. Although the energy distribution of electroluminescence remains almost the same when compared with that of the fresh diode, its intensity is enhanced by at least 30 times with an orange-red emission easily perceived by the naked eye. Parallelly, the low field-current density drastically increases, presumably due to the Si-nanocrystallite formation within the a-SiN(x) : H layer. This formation, triggered by the neighboring nanocrystalline-doped layers, was confirmed by the X-ray diffraction measurements indicating the rise in the local temperature during FP.

Subject Keywords

Amorphous silicon nitride, Doped nanocrystalline silicon, Electroforming, p(+)in(+) diode, Visible electroluminescence

URI

https://hdl.handle.net/11511/67680

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

DOI

https://doi.org/10.1109/ted.2011.2156409

Collections

Department of Physics, Article

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Citation Formats

M. ANUTGAN, T. ANUTGAN, İ. ATILGAN, and B. Katircioglu, “Electroforming of Amorphous Silicon Nitride Heterojunction pin Visible Light Emitter,” IEEE TRANSACTIONS ON ELECTRON DEVICES, pp. 2537–2543, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67680.