Electroforming of Amorphous Silicon Nitride Heterojunction pin Visible Light Emitter

Katircioglu, Bayram
The deposition parameters of doped hydrogenated nanocrystalline silicon grown by plasma-enhanced chemical vapor deposition were scanned to obtain highly conductive films. The optimized p(+) and n(+) nc-Si: H films were used as injecting layers in the fabrication of Si-rich hydrogenated amorphous silicon nitride (a-SiN(x) : H)-based heterojunction p(+) in(+) diode. The as-grown diode was subjected to a Joule-heating-assisted forming process (FP) via the application of a high electric field. The modifications in the luminescent, electrical, and structural properties of the diode subsequent to the FP were investigated. Although the energy distribution of electroluminescence remains almost the same when compared with that of the fresh diode, its intensity is enhanced by at least 30 times with an orange-red emission easily perceived by the naked eye. Parallelly, the low field-current density drastically increases, presumably due to the Si-nanocrystallite formation within the a-SiN(x) : H layer. This formation, triggered by the neighboring nanocrystalline-doped layers, was confirmed by the X-ray diffraction measurements indicating the rise in the local temperature during FP.


Optical properties of silicon based amorphous thin films
Akaoğlu, Barış; Katırcıoğlu, Bayram; Department of Physics (2004)
Silicon based hydrogenated amorphous semiconducting (intrinsic and n/p doped a-Si:H and a-Si1-xCx:H) thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) system. In order to analyze the optical response of these amorphous films, intrinsic optical absorption mechanisms have resumed and spectral variations of absorption coefficient ?(E) are derived. The exponential variation of absorption coefficient for energies below the band edge is discussed in the frame of randomly distribu...
Investigation of single-walled carbon nanotube growth parameters using alcohol catalytic chemical vapour deposition
Ünalan, Hüsnü Emrah (2005-10-01)
A detailed parametric study of single-walled carbon nanotubes (SWNTs) synthesized in powder form and on substrates using the alcohol catalytic chemical vapour deposition (ACCVD) method is reported. As-grown SWNTs were analysed using transmission electron microscopy (TEM), field-emission scanning electron microscopy (FE-SEM), Raman spectroscopy and UV-vis-NIR spectroscopy to obtain structural and electronic information. We found that nucleation and growth of SWNTs occurs within seconds after introduction of ...
Polybenzimidazole based nanocomposite membranes with enhanced proton conductivity for high temperature PEM fuel cells
Ozdemir, Yagmur; Uregen, Nurhan; DEVRİM, YILSER (2017-01-26)
In this study, phosphoric acid doped PBI nanocomposite membranes were prepared by dispersion of various amounts of inorganic nanoparticles in PBI polymer followed by phosphoric acid (H3PO4) doping for high temperature proton exchange membrane fuel cells (HT-PEMFC). All of the PBI composite membranes were cast from the same FBI polymer with the same molecular weight. Titanium dioxide (TiO2), silicon dioxide (SiO2) and inorganic proton conductor zirconium phosphate (ZrP) were used as inorganic fillers. The PB...
Optical characterization of silicon based hydrogenated amorphous thin films by un-visible and infrared measurements
Kılıç, İlker; Katırcıoğlu, Bayram; Department of Physics (2006)
Various carbon content hydrogenated amorphous silicon carbide (a-Si1ŁxCx:H) and hydrogenated amorphous silicon (a-Si:H) thin films have been deposited on various substrates by using plasma enhanced chemical vapour deposition (PECVD) technique. Transmission spectra of these films have been determined within UV-Visible region and the obtained data were analysed to find related physical constants such as; refractive indices, thicknesses, etc. Fourier transform infrared (FT-IR) spectrometry technique has been u...
Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure
Ozdemir, O; Atilgan, I; Akaoglu, B; Sel, K; Katircioglu, B (Elsevier BV, 2006-02-21)
A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under str...
Citation Formats
M. ANUTGAN, T. ANUTGAN, İ. ATILGAN, and B. Katircioglu, “Electroforming of Amorphous Silicon Nitride Heterojunction pin Visible Light Emitter,” IEEE TRANSACTIONS ON ELECTRON DEVICES, pp. 2537–2543, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67680.