Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
FORMATION OF YBA2CU3O7-X THICK-FILMS BY A DIFFUSION PROCESS BETWEEN Y2BACUO5 AND (BACUO2, CUO)
Date
1991-01-01
Author
FREEMAN, PA
Özkan, Necati
HONNEYBALL, PD
GLOWACKI, BA
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
169
views
0
downloads
Cite This
The preparation of thick films of YBa2Cu3O7-x by diffusion between Y2BaCuO5 substrates and a surface layer of a barium cuprate mixture (BaCuO2, CuO) was investigated. The influence of the substrate microstructure and density on the morphology and properties of the diffusion layer were determined by scanning microscopy and transport current measurements.
Subject Keywords
Physics, Applied
,
Physics, Condensed Matter
URI
https://hdl.handle.net/11511/31438
Journal
SUPERCONDUCTOR SCIENCE & TECHNOLOGY
DOI
https://doi.org/10.1088/0953-2048/4/1s/105
Collections
Graduate School of Natural and Applied Sciences, Article
Suggestions
OpenMETU
Core
Structural characterization of Zn-In-Se thin films
Gullu, H. H.; Parlak, Mehmet (World Scientific Pub Co Pte Lt, 2017-02-20)
In this study, structural properties of the Zn In Se (ZIS) thin films deposited by thermal evaporation method were investigated. The as-grown and annealed ZIS films were found in polycrystalline structure with the main orientation in (112) direction. The compositional analysis of the films showed that they were in Zn-rich behavior and there was a slight change in the elemental contribution to the structure with annealing process. Raman analysis was carried out to determine the crystalline structure and the ...
Structural and electrical characterization of a-plane GaN grown on a-plane SiC
Craven, MD; Chakraborty, A; İmer, Muhsine Bilge; Wu, F; Keller, S; Mishra, UK; Speck, JS; DenBaars, SP (2003-01-01)
Planar nonpolar (11 (2) over bar0) a-plane GaN thin films were grown on (11 (2) over bar0) a-plane 6H-SiC substrates via metalorganic chemical vapor deposition by depositing a high temperature AlN buffer layer prior to the epitaxial GaN growth. The orientation of the GaN film and AlN buffer layer directly match that of the SiC substrate, as determined by on- and off-axis X-ray diffraction measurements. The morphological evolution of GaN grown on the AlN buffer layers was investigated using atomic force micr...
Transport studies of carbon-rich a-SiCx : H film through admittance and deep-level transient spectroscopy measurements
Atilgan, I; Ozdemir, O; Akaoglu, B; Sel, K; Katircioglu, B (Informa UK Limited, 2006-07-01)
An intrinsic, carbon- rich a- SiCx: H thin film, prepared by the plasma- enhanced chemical vapour deposition ( PECVD) technique, has been studied mainly by AC admittance and small- pulse deep- level transient spectroscopy ( DLTS) measurements on an Al/ a- SiCx: H/ p- Si metal - insulator - semiconductor ( MIS) structure. The effects of measurement temperature, voltage and small- signal AC modulation frequency on the MIS capacitor are qualitatively and quantitatively described. The kinetics of charge injecti...
PREPARATION OF Pb(Zr,Ti)O-3 THIN FILMS AND POWDERS BY THE SOL-GEL PROCESS
Ozenbas, Macit; Ergin, Umit (Informa UK Limited, 1996-01-01)
The present paper describes the preparation of Pb(Zr,Ti)O-3 thin films and powders from metal chlorides by homogeneous precipitation using urea. The rate of decomposition of urea is very slow and the particles formed are very small in size (micron-sized) and highly homogeneous in composition. The coating of the films was carried out on alumina and silicon substrates in an ambient atmosphere. Heat treatment temperatures in excess of 800 degrees C were required to ensure that the perovskite phase dominated in...
AMORPHOUS-TO-CRYSTALLINE TRANSITION OF SELENIUM THIN-FILMS DEPOSITED ONTO ALUMINUM SUBSTRATES
Özenbaş, Ahmet Macit (Elsevier BV, 1990-01-01)
The crystallization of amorphous selenium (a-Se) films prepared by vacuum deposition at < 10−5torr onto aluminum substrates at 20°C was examined. The amorphous-to-crystalline transition was obtained by annealing the films between 70–85°C. The crystalline structures resulting from annealing at different temperatures have been identified by SEM (Scanning Electron Microscopy). X-ray and TEM (Transmission Electron Microscopy) studies revealed that these crystals were of hexagonal structure. The thicknesses of t...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
P. FREEMAN, N. Özkan, P. HONNEYBALL, and B. GLOWACKI, “FORMATION OF YBA2CU3O7-X THICK-FILMS BY A DIFFUSION PROCESS BETWEEN Y2BACUO5 AND (BACUO2, CUO),”
SUPERCONDUCTOR SCIENCE & TECHNOLOGY
, pp. 0–0, 1991, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31438.