A High Power, GaN, Quarter-Wave Length Switch for X-Band Applications

Date

2018-11-02

Author

Memioglu, Onur
Turan, Duygu Isinsu
Kocer, Fatih
Aydın Çivi, Hatice Özlem

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This paper presents an X-band single pole double throw (SPDT) switch build on a commercial 0.25 mu m Gallium Nitride (GaN) on silicon carbide (SiC) technology. Since the switch is designed to handle at least 25 W input power, special attention was given in minimizing the insertion loss, while achieving very high isolation values. This is achieved by utilizing carefully tuned double quarter wavelength transmission line architecture. The fabricated IC is measured to have 0.8 dB of insertion loss with peak isolation of 60 dB for the 8-12 GHz band, and reflections less than -10 dB throughout the whole bandwidth. The 1 dB compression point of the switch is measured at 43.3 dBm.

Subject Keywords

Gallium nitride, MMICs, Silicon carbide, Scattering parameters, Switches

URI

https://hdl.handle.net/11511/53068

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

O. Memioglu, D. I. Turan, F. Kocer, and H. Ö. Aydın Çivi, “A High Power, GaN, Quarter-Wave Length Switch for X-Band Applications,” 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53068.