A High Power, GaN, Quarter-Wave Length Switch for X-Band Applications

Memioglu, Onur
Turan, Duygu Isinsu
Kocer, Fatih
Aydın Çivi, Hatice Özlem
This paper presents an X-band single pole double throw (SPDT) switch build on a commercial 0.25 mu m Gallium Nitride (GaN) on silicon carbide (SiC) technology. Since the switch is designed to handle at least 25 W input power, special attention was given in minimizing the insertion loss, while achieving very high isolation values. This is achieved by utilizing carefully tuned double quarter wavelength transmission line architecture. The fabricated IC is measured to have 0.8 dB of insertion loss with peak isolation of 60 dB for the 8-12 GHz band, and reflections less than -10 dB throughout the whole bandwidth. The 1 dB compression point of the switch is measured at 43.3 dBm.


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A novel complementary metal oxide semiconductor (CMOS) compatible microchannel heat sink is designed and fabricated for monolithic liquid cooling of electronic circuits. The microchannels are fabricated with full metal walls between adjacent channels with a polymer top layer for easy sealing and optical visibility of the channels. The use of polymer also provides flexibility in adjusting the width of the channels allowing better management of the pressure drop. The proposed microchannel heat sink requires n...
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This thesis presents the development of electrochemical etch-stop techniques (ECES) to achieve high precision 3-dimensional integrated MEMS sensors with wet anisotropic etching by applying proper voltages to various regions in silicon. The anisotropic etchant is selected as tetra methyl ammonium hydroxide, TMAH, considering its high silicon etch rate, selectivity towards SiO2, and CMOS compatibility, especially during front-side etching of the chip/wafer. A number of parameters affecting the etching are inv...
A 180 nm Self-Powered Rectifier Circuit for Electromagnetic Energy Harvesters
Ulusan, Hasan; Zorlu, Ozge; Külah, Haluk; Muhtaroglu, Ali (2013-12-18)
This paper presents a new self-powered low voltage rectifier implementation for vibration-based electromagnetic (EM) energy harvesters. The proposed circuit is an improved version of the previously reported rectifier, which was designed in TSMC 90 nm CMOS technology. The circuit is designed in lower cost UMC 180 nm CMOS technology, and uses a passive AC/DC quadrupler structure to supply the external power of the utilized active components. Simulation results show that the maximum power conversion efficiency...
An on-die ultra-low voltage DC-DC step-up converter with voltage doubling LC-tank
Jayaweera, H. M. P. C.; Pathirana, W. P. M. R.; Muhtaroglu, Ali (IOP Publishing; 2016-12-01)
In this paper we report the design, characterization and verification of a novel on-die ultra-low voltage DC-DC converter circuit for energy harvester applications in 0.18 mu m complementary metal oxide semiconductor (CMOS) technology. The circuit self-starts, does not use off-chip components, and is thus suitable for use in highly integrated low cost systems. The first version of the design has a five-stage charge-pump stimulated by an oscillator with two center-tap inductors. It is validated on a test chi...
A Self-Adapting Synchronized-Switch Interface Circuit for Piezoelectric Energy Harvesters
Chamanian, Salar; Muhtaroglu, Ali; Külah, Haluk (Institute of Electrical and Electronics Engineers (IEEE), 2020-01-01)
This paper presents a self-adapting synchronized-switch harvesting (SA-SSH) interface circuit to extract energy from vibration-based piezoelectric energy harvesters (PEHs). The implemented circuit utilizes a novel switching technique to recycle optimum amount of harvested charge on piezoelectric capacitance to strengthen the damping force, and simultaneously achieve load-independent energy extraction with a single inductor. Charge recycling is realized by adjusting extraction time, and optimized through a m...
Citation Formats
O. Memioglu, D. I. Turan, F. Kocer, and H. Ö. Aydın Çivi, “A High Power, GaN, Quarter-Wave Length Switch for X-Band Applications,” 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53068.