A High Power, GaN, Quarter-Wave Length Switch for X-Band Applications

Date

2018-11-02

Author

Memioglu, Onur
Turan, Duygu Isinsu
Kocer, Fatih
Aydın Çivi, Hatice Özlem

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

105
views

0
downloads

This paper presents an X-band single pole double throw (SPDT) switch build on a commercial 0.25 mu m Gallium Nitride (GaN) on silicon carbide (SiC) technology. Since the switch is designed to handle at least 25 W input power, special attention was given in minimizing the insertion loss, while achieving very high isolation values. This is achieved by utilizing carefully tuned double quarter wavelength transmission line architecture. The fabricated IC is measured to have 0.8 dB of insertion loss with peak isolation of 60 dB for the 8-12 GHz band, and reflections less than -10 dB throughout the whole bandwidth. The 1 dB compression point of the switch is measured at 43.3 dBm.

Subject Keywords

Gallium nitride, MMICs, Silicon carbide, Scattering parameters, Switches

URI

https://hdl.handle.net/11511/53068

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

Suggestions

OpenMETU
Core

An X-Band Robust GaN Low-Noise Amplifier MMIC with sub 2 dB Noise Figure Kazan, Oğuz; Koçer, Fatih; Aydın Çivi, Hatice Özlem (2018-11-19) This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show that the LNA has a gain of more than 20 dB while achieving a noise figure of less than 2 dB. The three stage topology achieves high linearity, providing an OIP3 of 29 dBm at 0.6 W power dissipation. The robustness tests show that the circuit survives to at least 2.5 W (34 dBm) input power. With a size of just 2.8 x 1.3 mm(2) (3.6 mm(2)) the presented LNA is compact when compared to the state of the art. The ...
A CMOS COMPATIBLE METAL-POLYMER MICROCHANNEL HEAT SINK FOR MONOLITHIC CHIP COOLING APPLICATIONS Koyuncuoglu, Aziz; Okutucu Özyurt, Hanife Tuba; Külah, Haluk (2010-08-13) A novel complementary metal oxide semiconductor (CMOS) compatible microchannel heat sink is designed and fabricated for monolithic liquid cooling of electronic circuits. The microchannels are fabricated with full metal walls between adjacent channels with a polymer top layer for easy sealing and optical visibility of the channels. The use of polymer also provides flexibility in adjusting the width of the channels allowing better management of the pressure drop. The proposed microchannel heat sink requires n...
Development of electrochemical etch-stop techniques for integrated MEMS sensors Yaşınok, Gözde Ceren; Akın, Tayfun; Department of Electrical and Electronics Engineering (2006) This thesis presents the development of electrochemical etch-stop techniques (ECES) to achieve high precision 3-dimensional integrated MEMS sensors with wet anisotropic etching by applying proper voltages to various regions in silicon. The anisotropic etchant is selected as tetra methyl ammonium hydroxide, TMAH, considering its high silicon etch rate, selectivity towards SiO2, and CMOS compatibility, especially during front-side etching of the chip/wafer. A number of parameters affecting the etching are inv...
A 180 nm Self-Powered Rectifier Circuit for Electromagnetic Energy Harvesters Ulusan, Hasan; Zorlu, Ozge; Külah, Haluk; Muhtaroglu, Ali (2013-12-18) This paper presents a new self-powered low voltage rectifier implementation for vibration-based electromagnetic (EM) energy harvesters. The proposed circuit is an improved version of the previously reported rectifier, which was designed in TSMC 90 nm CMOS technology. The circuit is designed in lower cost UMC 180 nm CMOS technology, and uses a passive AC/DC quadrupler structure to supply the external power of the utilized active components. Simulation results show that the maximum power conversion efficiency...
An on-die ultra-low voltage DC-DC step-up converter with voltage doubling LC-tank Jayaweera, H. M. P. C.; Pathirana, W. P. M. R.; Muhtaroglu, Ali (IOP Publishing; 2016-12-01) In this paper we report the design, characterization and verification of a novel on-die ultra-low voltage DC-DC converter circuit for energy harvester applications in 0.18 mu m complementary metal oxide semiconductor (CMOS) technology. The circuit self-starts, does not use off-chip components, and is thus suitable for use in highly integrated low cost systems. The first version of the design has a five-stage charge-pump stimulated by an oscillator with two center-tap inductors. It is validated on a test chi...

Citation Formats

O. Memioglu, D. I. Turan, F. Kocer, and H. Ö. Aydın Çivi, “A High Power, GaN, Quarter-Wave Length Switch for X-Band Applications,” 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53068.