An X-Band Robust GaN Low-Noise Amplifier MMIC with sub 2 dB Noise Figure

Date

2018-11-19

Author

Kazan, Oğuz
Koçer, Fatih
Aydın Çivi, Hatice Özlem

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This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show that the LNA has a gain of more than 20 dB while achieving a noise figure of less than 2 dB. The three stage topology achieves high linearity, providing an OIP3 of 29 dBm at 0.6 W power dissipation. The robustness tests show that the circuit survives to at least 2.5 W (34 dBm) input power. With a size of just 2.8 x 1.3 mm(2) (3.6 mm(2)) the presented LNA is compact when compared to the state of the art. The circuit is realized using the 0.25 mu m Power GaN/SiC HEMT process by WIN Semiconductor.

Subject Keywords

Scattering parameters, Noise figure, MMICs, Low-noise amplifiers, HEMTs, Gallium nitride

URI

https://hdl.handle.net/11511/36735

DOI

https://doi.org/10.23919/eumic.2018.8539909

Conference Name

13th European Microwave Integrated Circuits Conference (EuMIC)

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

O. Kazan, F. Koçer, and H. Ö. Aydın Çivi, “An X-Band Robust GaN Low-Noise Amplifier MMIC with sub 2 dB Noise Figure,” presented at the 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, SPAIN, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36735.