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Structural characterization of intrinsic a-Si:H thin films for silicon heterojunction solar cells
Date
2013-01-01
Author
Pehlivan, O.
Yilmaz, O.
Kodolbas, A. O.
Duygulu, O.
Tomak, Mehmet
Metadata
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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We have utilized ex-situ spectroscopic ellipsometry and HRTEM to characterize the optical and structural properties of intrinsic a-Si:H thin layer that plays a key role for the improvement of the open circuit voltage in silicon heterojunction solar cells. Intrinsic a-Si:H films were deposited on (100) p-type CZ silicon wafers by using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at 225 degrees C substrate temperature and deposition time ranges from 15 s to 1800 s. Observed changes in the imaginary part of pseudo dielectric constant, epsilon(2), of c-Si spectrum with two peaks centered in 3.4 eV and 4.2 eV to a-Si:H which has an intermediate spectrum with a soft peak at about 4.2 eV has been analyzed with using effective medium approximation model.
Subject Keywords
a-Si:H/c-Si heterojunction
,
Solar cell
,
PECVD
,
Spectroscopic ellipsometer
,
Effective medium approximation
URI
https://hdl.handle.net/11511/55867
Journal
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
Collections
Department of Physics, Article
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O. Pehlivan, O. Yilmaz, A. O. Kodolbas, O. Duygulu, and M. Tomak, “Structural characterization of intrinsic a-Si:H thin films for silicon heterojunction solar cells,”
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, pp. 22–24, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/55867.