Structural characterization of intrinsic a-Si:H thin films for silicon heterojunction solar cells

Date

2013-01-01

Author

Pehlivan, O.
Yilmaz, O.
Kodolbas, A. O.
Duygulu, O.
Tomak, Mehmet

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We have utilized ex-situ spectroscopic ellipsometry and HRTEM to characterize the optical and structural properties of intrinsic a-Si:H thin layer that plays a key role for the improvement of the open circuit voltage in silicon heterojunction solar cells. Intrinsic a-Si:H films were deposited on (100) p-type CZ silicon wafers by using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at 225 degrees C substrate temperature and deposition time ranges from 15 s to 1800 s. Observed changes in the imaginary part of pseudo dielectric constant, epsilon(2), of c-Si spectrum with two peaks centered in 3.4 eV and 4.2 eV to a-Si:H which has an intermediate spectrum with a soft peak at about 4.2 eV has been analyzed with using effective medium approximation model.

Subject Keywords

a-Si:H/c-Si heterojunction, Solar cell, PECVD, Spectroscopic ellipsometer, Effective medium approximation

URI

https://hdl.handle.net/11511/55867

Journal

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS

Collections

Department of Physics, Article

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Citation Formats

O. Pehlivan, O. Yilmaz, A. O. Kodolbas, O. Duygulu, and M. Tomak, “Structural characterization of intrinsic a-Si:H thin films for silicon heterojunction solar cells,” JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, pp. 22–24, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/55867.