Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Characterization and contact resistivity studies of ito thin films for use in silicon heterojunction solar cells
Download
index.pdf
Date
2020
Author
Güler, Seçil
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
378
views
248
downloads
Cite This
Transparent conductive oxides (TCO) are widely used in optoelectronic devices such as flat panel displays and solar cells. Indium tin oxide, due to its wide optical bandgap and high transmittance in the visible spectrum, is commonly used for device applications such as anti-reflective coating, front TCO layer in silicon heterojunction solar cells. When ITO is used as TCO layer, the carrier transport mechanism through the junction is improved due to the decrease in the free carrier absorption. In this study, the effect of deposition conditions of ITO thin films on the material properties, as well as the material optimization towards the decrease of resistivity and carrier concentration simultaneously and the increase of the transparency and mobility values have been investigated. In order to achieve this goal, ITO thin films with various thicknesses were deposited on borosilicate glass substrates and n type silicon wafers by RF (Radio Frequency) magnetron sputtering using different deposition conditions. The main sputtering parameters were the sputtering power, substrate temperature, deposition pressure and oxygen content in the gas mixture. ITO films deposited under different conditions have been characterized in order to determine the optimum deposition parameters leading to ITO thin films with high conductivity, vi high transmittance in the visible range as well as the low carrier concentration. The structural, morphological, electrical and optical properties of the deposited ITO films have been characterized by X-Ray Diffraction, Atomic Force Microscopy (AFM), four-point-probe, Hall Effect and spectrophotometric measurement techniques. Besides the optimization studies of ITO thin films for Silicon Heterojunction Solar Cells, the specific contact resistivity studies between ITO and different layers in SHJ structure have been also carried out by using one dimensional transfer length method (1D-TLM). In the last part of the thesis study, different optimized ITO layers were deposited as an anti-reflective coating layer in SHJ solar cells and effect of ITO film properties on SHJ cell parameters have been investigated.
Subject Keywords
Specific contact resistivity
,
Keywords: Transparent conductive oxide(TCO)
,
indium tin oxide(ITO)
,
silicon heterojunction solar cells
,
specific contact resistivity.
URI
http://etd.lib.metu.edu.tr/upload/12625239/index.pdf
https://hdl.handle.net/11511/45391
Collections
Graduate School of Natural and Applied Sciences, Thesis
Suggestions
OpenMETU
Core
Fabrication and characterization of PEDOT:PSS hole transport layers for silicon solar cells
Türkay, Deniz; Yerci, Selçuk; Department of Micro and Nanotechnology (2019)
Heterojunction silicon solar cells have gained considerable interest in recent years with the demonstration of record-high device performances. However, these devices are typically based on inorganic layers fabricated at high temperatures under vacuum environment, using toxic precursors. The low temperature budget, non-toxic chemical contents, and wide range of adjustability in physical and electrical properties make poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) a promising candidate a...
Structural characterization of intrinsic a-Si:H thin films for silicon heterojunction solar cells
Pehlivan, O.; Yilmaz, O.; Kodolbas, A. O.; Duygulu, O.; Tomak, Mehmet (2013-01-01)
We have utilized ex-situ spectroscopic ellipsometry and HRTEM to characterize the optical and structural properties of intrinsic a-Si:H thin layer that plays a key role for the improvement of the open circuit voltage in silicon heterojunction solar cells. Intrinsic a-Si:H films were deposited on (100) p-type CZ silicon wafers by using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at 225 degrees C substrate temperature and deposition time ranges from 15 s to 1800 s. Observed changes in the imag...
Analysis of boron doped hydrogenated amorphous silicon carbide thin film for silicon heterojunction solar cells
Salimi, Arghavan; Turan, Raşit; Department of Micro and Nanotechnology (2019)
Silicon based solar cells are the dominant type of solar cells in the photovoltaic industry. Recently, there have been increasing efforts to develop c-Si solar cells with higher efficiency and lower cost. Among them, silicon heterojunction solar cell (SHJ) is attracting much attention because of its superior performance values demonstrated at both R&D and industrial levels. One of the common limiting criteria is the recombination at the front side which can be solved by providing proper passivation at the f...
Development of AZO TCOs with ALD for HEMT and HJSC solar cell applications
Tugrul, Deniz; Cakmak, Huseyin; Özbay, Ekmel; İmer, Muhsine Bilge (2020-10-04)
Transparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. These films can be produced with solid, liquid and vapor phase deposition techniques. Generally, metal oxides such as CdO, In2O3, SnO2, Ga2O3 and ZnO can be used in these structures as intrinsic or extrinsic semiconductors. Purpose of this study is to reproduce widely studied Aluminium doped Zinc Oxide (AZO) using a...
Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications
Tugrul, Deniz; Cakmak, Huseyin; Özbay, Ekmel; İmer, Muhsine Bilge (2021-12-01)
Transparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. Purpose of this study is to produce and optimize properties of Aluminum doped Zinc Oxide (AZO) using a vapor phase technique, Atomic Layer Deposition (ALD) for (n+) a-Si:H surface of silicon Heterojunction Solar Cells (HJSCs) and High Electron Mobility Transistor (HEMT) applications. This study is focused on the eff...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
S. Güler, “Characterization and contact resistivity studies of ito thin films for use in silicon heterojunction solar cells,” Thesis (M.S.) -- Graduate School of Natural and Applied Sciences. Physics., Middle East Technical University, 2020.
