Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode

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2019-03-01

Author

Güllü, Hasan Hüseyin
YILDIZ, DİLBER ESRA

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The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric constant and dielectric loss are found in decreasing behavior with increase in frequency due to the characteristics of the interface capacitance in the diode and so that the similar behavior was observed in loss tangent. With the contribution of the series resistance, the results of the electrical conductivity analysis indicated direct proportionality to the frequency change. Additionally, electric modulus was discussed to represent the dielectric relaxation process in the diode structure.

Subject Keywords

Frequency effect, Dielectric properties, E-beam evaporation

URI

https://hdl.handle.net/11511/56838

Journal

JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI

DOI

https://doi.org/10.2339/politeknik.389636

Collections

Test and Measurement Center In advanced Technologies (MERKEZ LABORATUVARI), Article

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Citation Formats

H. H. Güllü and D. E. YILDIZ, “Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode,” JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, pp. 63–67, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/56838.