Dielectric and photo-dielectric properties of TlGaSeS crystals

Download

index.pdf

Date

2014-05-01

Author

Qasrawi, A. F.
Abu-Zaid, Samah F.
Ghanameh, Salam A.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

204
views

0
downloads

The room temperature, dark and photo-dielectric properties of the novel crystals TlGaSeS are investigated in the frequency, intensity and biasing voltage having ranges of similar to 1-120 MHz, 14-40 klux and 0-1 V, respectively. The crystals are observed to exhibit a dark high frequency effective dielectric constant value of similar to 10.65 x 10(3) with a quality factor of similar to 8.84 x 10(4) at similar to 120 MHz. The dielectric spectra showed sharp resonance-antiresonance peaks in the frequency range of similar to 25-250 kHz. When photoexcited, pronounced increase in the dielectric constant and in the quality factor values with increasing illumination intensity are observed. Signal amplification up to similar to 33% with improved signal quality up to similar to 29% is attainable via photoexcitation. On the other hand, the illuminated capacitance voltage characteristics of the crystals reflected a downward shift in the voltage biasing and in the built-in voltage of the device that is associated with increase in the uncompensated carrier density. The increase in the dielectric constant with increasing illumination intensity is ascribed to the decrease in the crystal's resistance as a result of increased free carrier density. The light sensitivity of the crystals, the improved dielectric properties and the lower biasing voltage obtained via photoexcitation and the well-enhanced signal quality factor of the crystals make them promising candidates for optical communication systems.

Subject Keywords

Varactor, TlGaSeS, Sensors, Dielectric

URI

https://hdl.handle.net/11511/32833

Journal

BULLETIN OF MATERIALS SCIENCE

DOI

https://doi.org/10.1007/s12034-014-0693-y

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Optoelectronic and electrical properties of TlGaS2 single crystal Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2005-10-01) The optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static r...
Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode Güllü, Hasan Hüseyin; YILDIZ, DİLBER ESRA (2019-03-01) The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric constant and dielectric loss are found in decreasing behavior with increase in frequency due to the characteristics of the interface capacitance in the diode and so that the similar behavior was observed in loss tangent. With the contribution of the series resistance, the results of th...
Dielectric and electrical properties of an organic device containing benzotriazole and fluorene bearing copolymer Yildiz, Dilber Esra; APAYDIN, Dogukan Hazar; Toppare, Levent Kamil; Çırpan, Ali (2013-05-05) Dielectric and electrical properties of a benzotriazole and fluorene copolymer were investigated using current-voltage (IV), capacitance-voltage (CV), and conductancevoltage (G/wV) measurements at room temperature. The electrical parameters, barrier height (phi Bo), and ideality factor (n) obtained from the forward bias LnI-V plot were found as 0.453 eV and 2.08, respectively. The Rsvalues were found as 2.20, 2.12, 1.90 using dV/dLnIversus I, H(I)versus I and F(V)-V plots,respectively. The dielectric consta...
Ion implantation in confined, pinching metallic plasmas Demokan, O; Marji, E (1999-02-15) A series of preliminary experiments have been carried out to obtain a metallic arc discharge, in the form of an annular cylindrical column, carrying a current in the axial direction. To assert this geometry, a ring-shaped cathode is adopted and an arc formation is triggered by heating the cathode externally. The plasma, initially in the form of a cylindrical shell, is seen to be confined and pinched by its own magnetic field. The resulting, radially inward flux is observed to produce efficient and multidire...
Spectroscopic study and numerical simulation of low-pressure radio-frequency capacitive discharge with argon downstream Tanisli, Murat; Rafatov, İsmail; Sahin, Neslihan; Mertadam, Sercan; Demir, Suleyman (Canadian Science Publishing, 2017-02-01) In this study, the characteristic properties and plasma parameters of capacitive radio frequency (RF) argon (Ar) discharge and supplementary discharge at low pressure are investigated with optical emission spectroscopy (OES). The wavelengths of spectral lines from OES are obtained between 650-900 nm. Using OES lines and related experimental data, the electron temperatures for different RF power, flow, and measurement periods are determined. Eventually, the properties of plasma including the electron tempera...

Citation Formats

A. F. Qasrawi, S. F. Abu-Zaid, S. A. Ghanameh, and N. Hasanlı, “Dielectric and photo-dielectric properties of TlGaSeS crystals,” BULLETIN OF MATERIALS SCIENCE, pp. 505–509, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32833.