A computer simulation of void dynamics under the action of electromigration and capillary forces in narrow thin interconnects

Date

2000-10-25

Author

Ogurtani, TO
Oren, EE

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In these studies a comprehensive picture of void dynamics in connection with the critical morphological evaluation has been thoroughly anticipated in order to understand main reasons as well as the conditions under which premature failure of metallic thin interconnects occur. Our mathematical model on diffusion and mass accumulation on void surfaces, under the action of applied electrostatic potential and capillary effects, follows a novel irreversible but discrete thermodynamic formulation of interphases and surfaces developed by the senior author in connection with the triple junction singularities as well as ordinary points along the interfaces.

Subject Keywords

Failure, Lines

URI

https://hdl.handle.net/11511/65188

Conference Name

Advanced Metallization Conference (AMC)

Collections

Department of Metallurgical and Materials Engineering, Conference / Seminar

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Citation Formats

T. Ogurtani and E. Oren, “A computer simulation of void dynamics under the action of electromigration and capillary forces in narrow thin interconnects,” SAN DIEGO, CA, 2000, p. 483, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65188.