Effect of illumination on commensurate-incommensurate phase transition temperature in layered semiconductor TlInS2

Ozdemir, S
Suleymanov, RA
The shift in the commensurate to incommensurate phase transition point as a result of thermocycling between the commensurate and incommensurate phases in the layered ferroelectric semiconductor TlInS2 is investigated, It is shown that the shifting of the phase transition point is strongly dependent on the intensity of the incident light of illumination. The observed effect is explained by the pinning process which is mole effective under illumination. Copyright (C) 1996 Elsevier Science Ltd


Thermally stimulated current in layered semiconductor TlInS2 with incommensurate phase
Ozdemir, S; Suleymanov, RA; Civan, E; Firat, T (1996-05-01)
The thermally stimulated current (TSC) is studied in the temperature range between the commensurate phase (CP) and incommensurate phase (ICP) in layered semiconductor TIInS2. It is shown that the successive thermocyclings between the CP and ICP lead to remarkable changes in the TSC spectrum. The changes in the TSC spectrum are explained in the framework of the model which is based on the interaction of modulation structure with the traps in TIInS2. In order to obtain the straightforward information about th...
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Effect of Illumination Temperature on Thermally Stimulated Current Spectrum of TlInS2
Özdemir, Salahattin; Bucurgat, Mahmut; Bulur, Enver (1999-01-01)
The effect of pre-illumination on both thermally stimulated current and photocurrent spectra of TlInS2 crystal is investigated. The increase in the photosensitivity of the crystal by several orders of magnitude together with the appearance of a new peak in the thermally stimulated current spectrum are observed as a result of the pre-illumination process. The filling of the traps, especially the sensitizing centers, during the pre-illumination is found to be the most favourable physical mechanism to explain ...
Citation Formats
S. Ozdemir and R. Suleymanov, “Effect of illumination on commensurate-incommensurate phase transition temperature in layered semiconductor TlInS2,” SOLID STATE COMMUNICATIONS, pp. 309–312, 1997, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65556.