Effect of illumination on commensurate-incommensurate phase transition temperature in layered semiconductor TlInS2

Date

1997-02-01

Author

Ozdemir, S
Suleymanov, RA

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The shift in the commensurate to incommensurate phase transition point as a result of thermocycling between the commensurate and incommensurate phases in the layered ferroelectric semiconductor TlInS2 is investigated, It is shown that the shifting of the phase transition point is strongly dependent on the intensity of the incident light of illumination. The observed effect is explained by the pinning process which is mole effective under illumination. Copyright (C) 1996 Elsevier Science Ltd

Subject Keywords

Ferroelectrics, Semiconductors, Photoconductivity, Phase transitions

URI

https://hdl.handle.net/11511/65556

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/s0038-1098(96)00613-8

Collections

Department of Physics, Article

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Citation Formats

S. Ozdemir and R. Suleymanov, “Effect of illumination on commensurate-incommensurate phase transition temperature in layered semiconductor TlInS2,” SOLID STATE COMMUNICATIONS, pp. 309–312, 1997, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65556.