LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS

Download

index.pdf

Date

1995-06-01

Author

ALLAKHVERDIEV, KR
Hasanlı, Nızamı
AYDINLI, A

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

10
views

14
downloads

Low-temperature photoluminescence spectra of TlInS2, TlIn0.95 Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel.

Subject Keywords

Semiconductors, Ferroelectrics, Optical properties, Phase transitions, Luminescence

URI

https://hdl.handle.net/11511/33156

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/0038-1098(95)00037-2

Collections

Department of Physics, Article

Citation Formats

K. ALLAKHVERDIEV, N. Hasanlı, and A. AYDINLI, “LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS,” SOLID STATE COMMUNICATIONS, vol. 94, no. 9, pp. 777–782, 1995, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33156.