Morphological evolution of edge-hillocks on single-crystal films having anisotropic drift-diffusion under the capillary and electromigration forces

Download

index.pdf

Date

2007-01-22

Author

Ogurtani, Tarik Omer
Celik, Aytac
Oren, Ersin Emre

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

187
views

0
downloads

The morphological evolution of hillocks at the unpassivated sidewalls of single-crystal metallic thin film interconnects is investigated via computer simulations using the free-moving boundary value problem. The effect of drift-diffusion anisotropy on the development of surface topographical scenarios is fully explored under the action of electromigration and capillary forces, utilizing numerous combinations of the surface texture, the drift-diffusion anisotropy and the direction of the applied electric field. The simulation studies yield analytical relationships for the velocity of the surface solitary waves and the drift velocity of electromigration-induced internal voids as a function of the applied current densities, which contain intrinsic and structural properties of the single-crystal thin films. The threshold value of the applied current density, above which electromigration-induced internal voids can be formed and may cause the catastrophic failure of interconnects by breaching, also appears explicitly in this relationship. (c) 2006 Published by Elsevier B.V.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Metals and Alloys

URI

https://hdl.handle.net/11511/66852

Journal

THIN SOLID FILMS

DOI

https://doi.org/10.1016/j.tsf.2006.08.020

Collections

Department of Metallurgical and Materials Engineering, Article

Suggestions

OpenMETU
Core

Au-8 cluster adsorption on Si(100):2 x 1 asymmetric surface studied by a first principles calculation Akturk, Olcay Uzengi; Tomak, Mehmet (Elsevier BV, 2010-04-02) In this work, we investigate the adsorption of Au-8 cluster onto H-terminated Si(100):2 x 1 asymmetric surface by density functional theory within local density and generalized gradient approximations. We study the site-dependent shape of Au-8 cluster, adsorption energies, band structures and the corresponding charge distribution. We show that the electronic properties of the cluster and substrate complex change with the location of the cluster on the surface.
Voltammetric and drift spectroscopy investigation in dithiophosphinate-chalcopyrite system Guler, T; Hicyilmaz, C; Gokagac, G; Ekmekci, Z (Elsevier BV, 2004-11-01) The mechanism of dithiophosphinate (DTPI) adsorption on chalcopyrite was investigated by diffuse reflectance Fourier transformation (DRIFT) spectroscopy and by cyclic voltammetry (CV) at various pHs. CV experiments showed that the redox reactions occurred at a certain degree of irreversibility on the chalcopyrite surface in the absence of a collector due to preferential dissolution of iron ions in slightly acid solution and irreversible surface coverage by iron oxyhydroxides in neutral and alkaline solution...
Symmetrical and decoupled nickel microgyroscope on insulating substrate Alper, Se; Akın, Tayfun (Elsevier BV, 2004-09-21) This paper presents a symmetrical and decoupled surface micromachined gyroscope fabricated by electroforming thick nickel on a glass substrate. The symmetric structure allows matched resonant frequencies for the drive and sense vibration modes for improved sensitivity, while the decoupled drive and sense oscillation modes prevents unstable operation due to mechanical coupling, resulting in a low zero-rate output drift. The use of a glass substrate instead of a silicon substrate reduces noise due to the para...
Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01) The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3...
First principles study on the structural, electronic, mechanical and lattice dynamical properties of XRhSb (X = Ti and Zr) paramagnet half-Heusler antimonides SÜRÜCÜ, GÖKHAN; CANDAN, ABDULLAH; Erkisi, Aytac; Gencer, Ayşenur; Güllü, Hasan Hüseyin (IOP Publishing, 2019-10-01) The half-Heusler TiRhSb and ZrRhSb alloys in the formation of face-centered cubic MgAgAs-type structure, which conforms to the F (4) over bar 3m space group with 216 as the space number, have been investigated using Generalized Gradient Approximation (GGA) implemented in Density Functional Theory (DFT). The calculated formation enthalpies and the plotted energy-volume curves of different types of structural phases (alpha, beta, and gamma) in these alloys indicate that the gamma-phase structure is the best e...

Citation Formats

T. O. Ogurtani, A. Celik, and E. E. Oren, “Morphological evolution of edge-hillocks on single-crystal films having anisotropic drift-diffusion under the capillary and electromigration forces,” THIN SOLID FILMS, pp. 2974–2983, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/66852.