Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
A photon counting dynamic digital lock-in amplifier for background suppression in glow discharge atomic emission spectrometry
Date
1996-01-15
Author
Gokmen, A
Ulgen, A
Yalcin, S
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
198
views
0
downloads
Cite This
A photon counting dynamic digital lock-in amplifier, (PC-DDLIA), has been developed for the suppression of Ar lines in glow discharge lamp atomic emission spectrometry, (GDL-AES). The experimental set-up consists of a Grimm-type GDL, a prism-type scanning monochromator, photon counting electronics, an Apple Ile computer with an interface card and a computer controllable high voltage power supply. The photon counting electronics are designed to convert the photon pulses to logic pulses. A discriminator is used to reject pulses below a threshold level. The high voltage power supply is modulated with a square waveform generated from DAC and photon pulses are counted synchronously by the timer/counter chip, versatile interface adaptor (VIA-6522) on the interface card of computer. The data are analyzed in two steps. In the ''learn mode'', the GDL is modulated with a square waveform between 370 and 670 V and two spectra consisting of only Ar lines are obtained in a spectral window between 287.1 and 290.0 nm. A new modulation waveform is computed from these spectra which yields two overlapped spectra when the PC-DDLIA is scanned over the same spectral window. In the ''analysis mode'' of data acquisition, a target material with the analyte element(s) in it is used and the spectrometer is scanned with a dynamically varying rectangular waveform over the same spectral window. The net spectrum consists of pure atomic lines free from any Ar lines. The detection limit for the determination of Si (288.2 nm) in the presence of interfering hr lines (288.1 and 288.4 nm) is found to be 0.083%, whereas suppression of Ar lines over the same spectral window lowers the detection limit to 0.013%.
Subject Keywords
Background suppression
,
Detection limit
,
Glow discharge lamp atomic emission spectrometry
,
Photon counting dynamic digitial lock-in amplifier
URI
https://hdl.handle.net/11511/66915
Journal
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY
DOI
https://doi.org/10.1016/0584-8547(95)01407-1
Collections
Department of Chemistry, Article
Suggestions
OpenMETU
Core
BACKGROUND SUPPRESSION OF AR LINES IN GLOW-DISCHARGE ATOMIC EMISSION-SPECTROMETRY BY A LOCK-IN AMPLIFIER AND KALMAN FILTER DECONVOLUTION
ULGEN, A; DOGAN, M; Gökmen, Ali; YALCIN, S (1993-01-01)
The Ar spectral lines are suppressed in Grimm-type glow discharge lamp atomic emission spectrometry (GDL-AES) by a double voltage modulation technique. The GDL is modulated between two voltage levels, typically 400 and 700 V. At the lower voltage level mainly Ar emission contributes whereas at the higher voltage level both Ar and atoms sputtered from the cathode contribute to the emission. The Ar emission spectrum at the lower voltage level is multiplied by a constant factor to scale it up to the same level...
A low-cost small pixel uncooled infrared detector for large focal plane arrays using a standard CMOS process
Eminoglu, S; Tanrikulu, MY; Tezcan, DS; Akın, Tayfun (2002-04-03)
This paper reports the development of a low-cost, small pixel uncooled infrared detector using a standard CMOS process. The detector is based on a suspended and thermally isolated p(+)-active/n-well diode whose forward voltage changes due to an increase in the pixel temperature with absorbed infrared radiation. The detector is obtained with simple post-CMOS etching steps on dies fabricated using a standard n-well CMOS process. The post-CMOS process steps are achieved without needing any deposition or lithog...
A readout circuit for QWIP infrared detector arrays using current mirroring integration
Tepegoz, M; Akın, Tayfun (2003-09-18)
This paper reports a current mirroring integration (CMI) CMOS readout circuit for high-resolution Quantum Well Infrared Photodetectors (QWIPs). The circuit uses a feedback structure with current mirrors to provide stable bias voltage across the photodetectors, which can be adjusted between 0 V and 3.5V. The photodetector current is mirrored to an integration capacitor which can be placed outside of the unit pixel, reducing the pixel area and allowing to integrate the current on larger capacitances for large...
A MEMS Based Lens Microscanner for Resolution Enhancement of Infrared Imaging Systems
Sozak, Ahmet; Simsek, Ertug; Azgın, Kıvanç (2019-01-01)
The aim of this study is to demonstrate a Micro Electro Mechanical Systems (MEMS) based in-plane (x and y axes) lens scanner to improve the resolution of Long Wave Infrared Optical Systems (8-12 mu m wavelength). The proposed actuator consists of a 2 axis decoupled stage and has 4 separate V-Shaped (Chevron) thermal actuators which provide sufficient force and displacement to position the lens within required time. Miniaturization of lens has been achieved by using an aspherical surface and optimization of ...
A low-cost uncooled infrared microbolometer detector in standard CMOS technology
Tezcan, DS; Eminoglu, S; Akın, Tayfun (Institute of Electrical and Electronics Engineers (IEEE), 2003-02-01)
This paper reports the development of a low-cost uncooled infrared microbolometer detector using a commercial 0.8 mum CMOS process, where the CMOS n-well layer is used as the infrared sensitive material. The n-well is suspended by front-end bulk-micromachining of the fabricated CMOS dies using electrochemical etch-stop technique in TMAH. Since this approach does not require any lithography or infrared sensitive material deposition after CMOS fabrication, the detector cost is almost equal to the CMOS chip co...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
A. Gokmen, A. Ulgen, and S. Yalcin, “A photon counting dynamic digital lock-in amplifier for background suppression in glow discharge atomic emission spectrometry,”
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY
, pp. 97–108, 1996, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/66915.