Electroforming of thin film silicon based homojunction pin diode

Katircioglu, B.
The recent observations of bright visible electroluminescence (EL) from electroformed thin film silicon based wide-gap alloys are further clamped down in a simpler structure. For this purpose, a standard quality, ordinary hydrogenated amorphous silicon (a-Si:H) homojunction pin diode was fabricated by plasma enhanced chemical vapor deposition. The fresh diode was characterized by temperature scanned current-voltage (I-V) and constant photocurrent measurements. The energy distribution of density of states within the forbidden gap of the intrinsic a-Si:H layer was determined by space charge limited current and optical absorption spectroscopies. Then the diode was intentionally subjected to a sufficiently high, calibrated electric field leading to its Joule heating assisted rapid crystallization at ambient atmosphere. The fresh and the formed diodes exhibit different I-V and EL characteristics. The current density of the formed diode increases drastically at low voltages while remaining unchanged at high voltages when compared to that of the fresh diode. Parallelly, the room temperature EL intensity under a particular current stress is boosted with electroforming. These interesting phenomena have been discussed in the frame of a self-consistent model.


Nickel assisted chemical etching for multi-crystalline Si solar cell texturing: a low cost single step alternative to existing methods
Takaloo, Ashkan Vakilipour; ES, FIRAT; BAYTEMİR, Gulsen; Turan, Raşit (2018-07-01)
The texturing of silicon surfaces is a well-known method of reducing the reflection from the surface of crystalline Si solar cell devices. With the utilization of diamond wires in recent advances in wafer slicing technology, surface texturing for the multi-crystalline Si wafers by the traditional acid-based texturing technique has become difficult. Metal-Assisted Etching (MAE) has been shown to be a promising and low-cost alternative to the traditional acid-based isotropic texturing. This paper reports, for...
Dye sensitized artificial photosynthesis in the gas phase over thin and thick TiO2 films under UV and visible light irradiation
Ozcan, O.; Yukruk, F.; Akkaya, E. U.; Üner, Deniz (2007-02-15)
Perylene diimide based organic sensitizers capable of electron generation under illumination were used to initiate gas phase photo reduction reactions on TiO2 thin and thick film surfaces. For comparison [Ru(Bpy)(3)](2+) dye sensitizers were also studied. The photo reduction Of CO2 was carried out under static conditions in the gas phase. TiO2 films were coated on hollow glass beads via a sol-gel procedure. Pt was incorporated on the films either by adding the precursor salt in the sol, Pt(in), or by wet im...
Silicon nanowire-silver indium selenide heterojunction photodiodes
KULAKCI, Mustafa; ÇOLAKOĞLU, Tahir; OZDEMİR, Baris; Parlak, Mehmet; Ünalan, Hüsnü Emrah; Turan, Raşit (IOP Publishing, 2013-09-20)
Structural and optoelectronic properties of silicon (Si) nanowire-silver indium selenide (AgInSe2) thin film heterojunctions were investigated. The metal-assisted etching method was employed to fabricate vertically aligned Si nanowire arrays. Stoichiometric AgInSe2 films were then deposited onto the nanowires using co-sputtering and sequential selenization techniques. It was demonstrated that the three-dimensional interface between the Si nanowire arrays and the AgInSe2 thin film significantly improved the ...
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, Mehmet (Springer Science and Business Media LLC, 2020-06-01)
This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calcula...
Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure
Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01)
In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with s...
Citation Formats
M. ANUTGAN, T. ANUTGAN, İ. ATILGAN, and B. Katircioglu, “Electroforming of thin film silicon based homojunction pin diode,” APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, pp. 197–204, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67406.