Capacitance analyses of hydrogenated nanocrystalline silicon based thin film transistor

Date

2011-03-31

Author

ANUTGAN, TAMİLA
ANUTGAN, MUSTAFA
Atilgan, Ismail
Katircioglu, Bayram

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The capacitance-voltage (C-V) measurements within 10(6)-10(-2) Hz frequency range were performed on the hydrogenated nanocrystalline silicon (nc-Si:H) bottom-gate thin film transistor (TFT) and metal-insulator-amorphous silicon (MIAS) structure, mechanically isolated from the same TFT. It was found that the conducting thin layer in nc-Si:H film expands the effective capacitor area beyond the electrode in the TFT structure, which complicates its C-V curves. Considering the TFT capacitance-frequency (C-F) curves, the equivalent circuit of the TFT structure was proposed and mechanism for this area expansion was discussed. On the other hand, the MIAS C-F curves were fitted by the equivalent circuit models to deduce its electrical properties. nc-Si:H neutral bulk effect was revealed by the dependence of the MIAS capacitance on frequency within 10(6)-10(3) Hz at both accumulation and depletion regimes. The inversion in MIAS was detected at 10(2)-10(-2) Hz for relatively low negative gate bias without any external activation source. The presence of the ac hopping conductivity in the nc-Si:H film was inferred from the fitting. In addition, the density of the interface traps and its energy distribution were determined.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Metals and Alloys

URI

https://hdl.handle.net/11511/67515

Journal

THIN SOLID FILMS

DOI

https://doi.org/10.1016/j.tsf.2011.01.284

Collections

Department of Physics, Article

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Citation Formats

T. ANUTGAN, M. ANUTGAN, I. Atilgan, and B. Katircioglu, “Capacitance analyses of hydrogenated nanocrystalline silicon based thin film transistor,” THIN SOLID FILMS, pp. 3914–3921, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67515.