Microprocessing by intense pulsed electron beam

2002-10-01
Goktas, H
Kirkici, H
Oke, G
Udrea, AV
Generation of intense electron beams by superposing two discharges, namely, a low-pressure dc glow discharge and a high-current pulsed discharge at pressures and voltages very similar to that of the pseudospark gap devices, has been studied. The small beam diameter, high peak current, and short pulse length are the characteristics of the electron beam generated using this technique. This technique does not require high vacuum facilities, and applications such as microprocessing, X-ray generation, and preionization for high-power lasers are feasible. The electron beam current is in the range of 10-30 A. Microprocessing as drilling tenths of microns diameter holes in different materials such as copper, titanium, and, tantalum has been performed. The microstructure of the irradiated materials has been investigated by means of scanning electron microsope (SEM) and atomic force microscope (AFM). Currently, the possibility of processing a matrix of holes is being considered.
IEEE TRANSACTIONS ON PLASMA SCIENCE

Suggestions

Synthesis of carbon nanotubes by a plasma based pulsed electron beam generator
Goktas, H.; Ayhan, U. B.; Gündüz, Güngör; Disbudak, H.; Eryilmaz, E.; Oke, G.; Cicek, B.; Somer, M. (IOP Publishing, 2006-01-01)
Carbon nanotubes (CNTs) were synthesized by using a plasma based electron beam generator, which has a fast filamentary discharge formed from the superposition of an ordinary low-pressure dc glow and a high-current pulsed discharge. To our knowledge, CNTs are synthesized for the first time by this method. Acetylene was used as the carbon source and the iron catalyst coated silica substrates were prepared by the sol-gel technique. The silica plates were first coated with an appropriate iron (III) nitrate solu...
Characteristic features of an ionization system with semiconducting cathode
SALAMOV, BAKHTİYAR; ALTINDAL, ŞEMSETTİN; ÖZER, METİN; Colakoglu, K; Bulur, Enver (EDP Sciences, 1998-06-01)
The characteristic features of a de discharge genera.ted between parallel plate electrodes and especially the discharge stabilization by the GaAs semiconducting cathode in such a system are studied. The cathode was irradiated on the back-side with IR light in a particular wavelength range that was used to control the photoconductivity of the material. The semiconductor material was found to stabilize the discharge. The current-voltage and radiation-voltage characteristics of the gas discharge cell with a se...
Transition from periodic to chaotic oscillations in a planar gas discharge-semiconductor system
Yuan, Chengxun; Yeşil, Cihan; Yao, Jingfeng; Zhou, Zhongxiang; Rafatov, İsmail (IOP Publishing, 2020-06-01)
The work studies the transition from periodic to chaotic oscillations in a dc-driven planar gas discharge with a high-ohmic electrode. The applied voltage and resistance of the semiconductor layer act as control parameters. The oscillations occur in the subnormal discharge regime. The bifurcation diagram and Lorenz map characterizing transition of this system to chaos through period-doubling bifurcations are obtained. Numerical models employed are based on the drift-diffusion theory of gas discharges. The e...
Micro processing by intense fast electron beam
Goktas, H; Kirkici, H; Oke, G; Udrea, M (2001-06-22)
Generation of intense electron beams by superposing two discharges, namely a low pressure do glow discharge and a high current pulsed discharge at pressures and voltages very similar to that of the pseudo-spark gap devices, has been reported previously [1, 2]. The small diameter, high peak current and short pulse length are the characteristics of the electron beam generated using this technique. In this technique, no high vacuum facilities are necessary, and many applications such as micro processing, X-ray...
Structural, electrical and optical characterization of ge-implanted gase single crystal grown by Bridgman Method
Karaağaç, Hazbullah; Akınoğlu, Bülent Gültekin; Department of Physics (2005)
In this work, structural, electrical and optical characterization of as-grown, Ge-implanted, and annealed GaSe single crystals grown by using 3-zone vertical Bridgman-Stockbarger system, have been studied by carrying out X-ray Diffraction (XRD), electrical conductivity, Hall effect, photoconductivity, and spectral transmission measurements. The temperature dependent electrical conductivity of these samples have been measured between 100 and 400 K. As a result, it was observed that upon implanting GaSe with ...
Citation Formats
H. Goktas, H. Kirkici, G. Oke, and A. Udrea, “Microprocessing by intense pulsed electron beam,” IEEE TRANSACTIONS ON PLASMA SCIENCE, pp. 1837–1842, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67570.