Microprocessing by intense pulsed electron beam

Goktas, H
Kirkici, H
Oke, G
Udrea, AV
Generation of intense electron beams by superposing two discharges, namely, a low-pressure dc glow discharge and a high-current pulsed discharge at pressures and voltages very similar to that of the pseudospark gap devices, has been studied. The small beam diameter, high peak current, and short pulse length are the characteristics of the electron beam generated using this technique. This technique does not require high vacuum facilities, and applications such as microprocessing, X-ray generation, and preionization for high-power lasers are feasible. The electron beam current is in the range of 10-30 A. Microprocessing as drilling tenths of microns diameter holes in different materials such as copper, titanium, and, tantalum has been performed. The microstructure of the irradiated materials has been investigated by means of scanning electron microsope (SEM) and atomic force microscope (AFM). Currently, the possibility of processing a matrix of holes is being considered.


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Carbon nanotubes (CNTs) were synthesized by using a plasma based electron beam generator, which has a fast filamentary discharge formed from the superposition of an ordinary low-pressure dc glow and a high-current pulsed discharge. To our knowledge, CNTs are synthesized for the first time by this method. Acetylene was used as the carbon source and the iron catalyst coated silica substrates were prepared by the sol-gel technique. The silica plates were first coated with an appropriate iron (III) nitrate solu...
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Goktas, H; Kirkici, H; Oke, G; Udrea, M (2001-06-22)
Generation of intense electron beams by superposing two discharges, namely a low pressure do glow discharge and a high current pulsed discharge at pressures and voltages very similar to that of the pseudo-spark gap devices, has been reported previously [1, 2]. The small diameter, high peak current and short pulse length are the characteristics of the electron beam generated using this technique. In this technique, no high vacuum facilities are necessary, and many applications such as micro processing, X-ray...
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In this work, structural, electrical and optical characterization of as-grown, Ge-implanted, and annealed GaSe single crystals grown by using 3-zone vertical Bridgman-Stockbarger system, have been studied by carrying out X-ray Diffraction (XRD), electrical conductivity, Hall effect, photoconductivity, and spectral transmission measurements. The temperature dependent electrical conductivity of these samples have been measured between 100 and 400 K. As a result, it was observed that upon implanting GaSe with ...
Citation Formats
H. Goktas, H. Kirkici, G. Oke, and A. Udrea, “Microprocessing by intense pulsed electron beam,” IEEE TRANSACTIONS ON PLASMA SCIENCE, pp. 1837–1842, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67570.