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Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)

2006-5-31
İmer, Muhsine Bilge
Speck , James S.
Denbaars , Steven P.
A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AIN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.