Trapping light with periodic micro and nano holes: effect of etching type on optical and electrical performances of a solar cell

2018-07-04
Altınoluk, Hayriye Serra
Çiftpınar, Emine Hande
Demircioglu, Olgu
Turan, Raşit

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We have carried out thermally stimulated current measurements on as-grown Tl(4)ln(3)GaS(8), Tl4InGa3Se8, and Tl2InGaS4 crystals in the low-temperature ranges of 10 - 90, 10 - 160, and 10 - 60 K, respectively. Using the different heating rates method, we revealed experimental evidence for trapping centers with activation energies of 12 meV (Tl4In3GaS8), 17 meV (Tl(4)lnGa(3)Se(8)), and 10 meV (Tl(2)lnGaS(4)). The capture cross sections of the traps were found to be 3.0 x 10(-25), 2.0 x 10(-26), and 1.3 x 10(-...
Trapping Center Parameters in N-Implanted Tl2Ga2S3Se Single Crystals by Thermally Stimulated Currents Measurements
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As-grown Tl2Ga2S3Se crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of 1 x 10(16) ions/cm(2). The effect of N implantation with annealing at 300 degrees C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping ...
Citation Formats
H. S. Altınoluk, E. H. Çiftpınar, O. Demircioglu, and R. Turan, “Trapping light with periodic micro and nano holes: effect of etching type on optical and electrical performances of a solar cell,” 2018, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/77432.