Trapping light with periodic micro and nano holes: effect of etching type on optical and electrical performances of a solar cell

Date

2018-07-04

Author

Altınoluk, Hayriye Serra
Çiftpınar, Emine Hande
Demircioglu, Olgu
Turan, Raşit

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https://hdl.handle.net/11511/77432

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Trapping center parameters in TlInS2 layered crystals by thermally stimulated current measurements Yuksek, NS; Hasanlı, Nızamı; Ozkan, H; Karci, O (Institute of Physics, Polish Academy of Sciences, 2004-07-01) Thermally stimulated current measurements are carried out on TlInS2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS2 crystal in the low-temperature region.
Trapping center parameters in TlInSSe layered single crystals bit thermally stimulated currents measurements Güler, Işıkhan; Hasanlı, Nızamı (2009-10-19) Thermally stimulated current measurements have been carried out on TlInSSe layered single crystals in the temperature range of 10-180 K at a constant heating rate 0.8 K s(-1) The electronic traps distributions have been analyzed by the different light illumination temperature technique (T-0.1 = 30, 40, 45, 50, 52, 55 and 57 K). It was revealed that the obtained traps distribution can be described as an exponential distribution. The variation of one order of magnitude in the trap density for every 41 meV was...
Trapping centers in undoped GaS layered single crystals Hasanlı, Nızamı; Yuksek, NS; Salihoglu, O (Springer Science and Business Media LLC, 2003-08-01) Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis of the data revealed six trap levels at 0.05, 0.06, 0.12, 0.63, 0.71, and 0.75 eV. The calculations for these traps yielded 1.2x10(-21), 2.9x10(-23), 2.4x10(-21), 8.0x10(-9), 1.9x10(-9) and 4.3x10(-10) cm(2) for the capture cross sections and 1.6x10(13), 5.0x10(12), 7.3x10(12), 1.2x10(14...
Trapping center parameters and optical absorption in. quaternary TI4In3GaS8, Tl4InGa3Se8,and Tl2InGaS4 semiconductors Hasanlı, Nızamı (Korean Physical Society, 2007-04-01) We have carried out thermally stimulated current measurements on as-grown Tl(4)ln(3)GaS(8), Tl4InGa3Se8, and Tl2InGaS4 crystals in the low-temperature ranges of 10 - 90, 10 - 160, and 10 - 60 K, respectively. Using the different heating rates method, we revealed experimental evidence for trapping centers with activation energies of 12 meV (Tl4In3GaS8), 17 meV (Tl(4)lnGa(3)Se(8)), and 10 meV (Tl(2)lnGaS(4)). The capture cross sections of the traps were found to be 3.0 x 10(-25), 2.0 x 10(-26), and 1.3 x 10(-...
Trapping Center Parameters in N-Implanted Tl2Ga2S3Se Single Crystals by Thermally Stimulated Currents Measurements YILDIRIM, TACETTİN; Hasanlı, Nızamı; Turan, Raşit (Institute of Physics, Polish Academy of Sciences, 2013-04-01) As-grown Tl2Ga2S3Se crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of 1 x 10(16) ions/cm(2). The effect of N implantation with annealing at 300 degrees C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping ...

Citation Formats

H. S. Altınoluk, E. H. Çiftpınar, O. Demircioglu, and R. Turan, “Trapping light with periodic micro and nano holes: effect of etching type on optical and electrical performances of a solar cell,” 2018, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/77432.