Trapping center parameters in TlInSSe layered single crystals bit thermally stimulated currents measurements

Date

2009-10-19

Author

Güler, Işıkhan
Hasanlı, Nızamı

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Thermally stimulated current measurements have been carried out on TlInSSe layered single crystals in the temperature range of 10-180 K at a constant heating rate 0.8 K s(-1) The electronic traps distributions have been analyzed by the different light illumination temperature technique (T-0.1 = 30, 40, 45, 50, 52, 55 and 57 K). It was revealed that the obtained traps distribution can be described as an exponential distribution. The variation of one order of magnitude in the trap density for every 41 meV was estimated. Moreover. the mean activation energy, attempt-to-escape frequency. capture cross-section and concentration of the traps were determined. (C) 2009 Elsevier B V All rights reserved.

Subject Keywords

Semiconductors, Chalcogenides, Defects, Electrical properties

URI

https://hdl.handle.net/11511/32214

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2009.06.092

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

I. Güler and N. Hasanlı, “Trapping center parameters in TlInSSe layered single crystals bit thermally stimulated currents measurements,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 41–45, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32214.