Determination of the Interface Properties of p-CZTSe/n-Si Nanowire Heterojunction Diode

Bayraklı, Özge
Terlemezoğlu, Makbule
Güllü, Hasan Hüseyin
Yıldız, Dilber Esra
Çolakoğlu, Tahir
Coşkun, Emre
Parlak, Mehmet


Determination of optical parameters of Ga0.75In0.25Se layered crystals
IŞIK, MEHMET; Hasanlı, Nızamı (2012-05-01)
The optical properties of the Ga0.75In0.25Se crystals have been investigated by means of transmission and reflection measurements in the wavelength range of 380-1100 nm. The analysis of the results performed at room temperature revealed the presence of optical indirect transtions with band gap energy of 1.89 eV. The variation of the band gap energy as a function of temperature was also studied in the temperature range of 10-300 K. The rate of change of band gap energy (? = 6.2 x 10(4) eV/K) and absolute zer...
Determination of kinetic parameters and hydrogen desorption characteristics of MgH2-10 wt% (9Ni-2Mg-Y) nano-composite
Pourabdoli, Mehdi; Raygan, Shahram; Abdizadeh, Hossein; Üner, Deniz (2013-09-10)
Hydrogen desorption kinetic parameters of MgH2 compounds were measured and compared with published gas solid reaction models. The compounds investigated in this study were as-received MgH2, ball milled MgH2, and MgH2 ball milled with 9Ni-2Mg-Y catalyst compound. It was determined that different models were necessary to fit the hydrogen desorption data collected at different temperatures on the same sample, indicating that desorption mechanisms changed with respect to temperature. Addition of (9Ni-2Mg-Y) all...
Determination of the mechanical properties of polyester based fiber-reinforced composites
Özdemir, Ömer; Turhan, Doğan; Department of Engineering Sciences (1996)
Determination of optical constants and temperature dependent band gap energy of GaS0.25Se0.75 single crystals
IŞIK, MEHMET; Hasanlı, Nızamı (2017-05-01)
Optical properties of GaS0.25Se0.75 single crystals were investigated by means of temperature -dependent transmission and room temperature reflection experiments. Derivative spectrophotometry analysis showed that indirect band gap energies of the crystal increase from 2.13 to 2.26 eV as temperature is decreased from 300 to 10 K. Temperature dependence of band gap energy was fitted under the light of theoretical expression. The band gap energy change with temperature and absolute zero value of the band gap e...
Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals
IŞIK, MEHMET; YILDIRIM, TACETTİN; Hasanlı, Nızamı (2015-07-01)
Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290-770 K. U glow curve exhibited two peaks with maximum temperatures of similar to 373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trap...
Citation Formats
Ö. Bayraklı et al., “Determination of the Interface Properties of p-CZTSe/n-Si Nanowire Heterojunction Diode,” 2017, Accessed: 00, 2021. [Online]. Available: