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Optical characterization of CuIn5S8 crystals by ellipsometry measurements
Date
2016-04-01
Author
Hasanlı, Nızamı
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https://hdl.handle.net/11511/86384
Journal
Journal Of Physics And Chemistry Of Solids
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Optical characterization of CuIn5S8 crystals by ellipsometry measurements
IŞIK, MEHMET; Gasanly, Nizami (2016-04-01)
Optical properties of CuIn5S8 crystals grown by Bridgman method were investigated by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficients were obtained from the analysis of ellipsometry experiments performed in the 1.2-6.2 eV spectral region. Analysis of spectral dependence of the absorption coefficient revealed the existence of direct ban...
Optical absorption and reflection studies of Tl4InGa3S8 layered single crystals
Goksen, K.; Hasanlı, Nızamı; Ozkan, H. (Institute of Physics, Polish Academy of Sciences, 2007-07-01)
The optical properties of Tl4InGa3S8 layered single crystals have been studied by means of transmission and reflection measurements in the wavelength region between 400 and 1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.40 and 2.61 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed the rate of change of the indirect band gap with temperature as g...
Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry
IŞIK, MEHMET; Hasanlı, Nızamı (2015-07-10)
Optical properties of Ga2SeS crystals grown by Bridgman method were investigated by transmission, reflection and ellipsometry measurements. Analysis of the transmission and reflection measurements performed in the wavelength range of 400-1100 nm at room temperature indicated the presence of indirect and direct transitions with 2.28 eV and 2.38 eV band gap energies. Ellipsometry measurements were carried out in the 1.2-6.0 eV spectral region to get information about optical constants, real and imaginary part...
Optical characterization of silicon based hydrogenated amorphous thin films by un-visible and infrared measurements
Kılıç, İlker; Katırcıoğlu, Bayram; Department of Physics (2006)
Various carbon content hydrogenated amorphous silicon carbide (a-Si1ŁxCx:H) and hydrogenated amorphous silicon (a-Si:H) thin films have been deposited on various substrates by using plasma enhanced chemical vapour deposition (PECVD) technique. Transmission spectra of these films have been determined within UV-Visible region and the obtained data were analysed to find related physical constants such as; refractive indices, thicknesses, etc. Fourier transform infrared (FT-IR) spectrometry technique has been u...
Optical properties of Cu3In5S9 single crystals by spectroscopic ellipsometry
Işık, Mehmet; Nasser, H.; Ahmedova, F.; Guseinov, A.; Hasanlı, Nızamı (2018-01-01)
Cu3In5S9 single crystals were investigated by structural methods of x-ray diffraction and energy dispersive spectroscopy and optical techniques of ellipsometry and reflection carried out at room temperature. The spectral dependencies of optical constants; dielectric function, refractive index and extinction coefficient, were plotted in the range of 1.2-6.2 eV from ellipsometric data. The spectra of optical constants obtained from ellipsometry analyses and reflectance spectra presented a sharp change around ...
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N. Hasanlı, “Optical characterization of CuIn5S8 crystals by ellipsometry measurements,”
Journal Of Physics And Chemistry Of Solids
, pp. 13–17, 2016, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/86384.