An Integrated Thermopile Structure with High Responsivity and Detectivity in Any Standard CMOS Technology

Date

1997-06-19

Author

Olgun, Zeynel
Akar, Orhan
Külah, Haluk
Akın, Tayfun

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https://hdl.handle.net/11511/86810

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An integrated thermopile structure with high responsivity using any standard CMOS process Olgun, Z; Akar, O; Külah, Haluk; Akin, T (1997-01-01) This paper reports a new thermopile structure using n-poly/p(+)-active layers that are available in any CMOS technology. The thermopile structures are obtained by post-etching of the fabricated and bonded chips. P+-active layers are placed in n-well regions, which are protected from etching by electrochemical etch-stop technique in a TMAH solution. The characterization results show that Seebeck coefficients of the n-poly and p(+)-active layers are -335 mu V/K and 450 mu V/K, respectively. Tests show that a ...
An integrated thermopile structure with high responsivity using any standard CMOS process Akın, Tayfun; Akar, Orhan; Külah, Haluk (1998-04-01) This paper reports a new thermopile structure using n-poly/p(+)-active layers that are available in any CMOS technology. The thermopile structures are obtained by post-etching of the fabricated and bonded chips. P+-active layers are placed in n-well regions, which are protected from etching by the electrochemical etch-stop technique in a TMAH solution. The n-well regions are then removed using a short EDP etching to reduce the thermal conductivity of the suspended structures, improving the responsivity sign...
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Citation Formats

Z. Olgun, O. Akar, H. Külah, and T. Akın, “An Integrated Thermopile Structure with High Responsivity and Detectivity in Any Standard CMOS Technology,” 1997, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/86810.