Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Temperature dependent current-voltage characteristics of SnTe-based Schottky Barrier Diode
Date
2017-10-15
Author
Güllü, Hasan Hüseyin
Yıldız, Dilber Esra
Terlemezoğlu, Makbule
Parlak, Mehmet
Metadata
Show full item record
Item Usage Stats
56
views
0
downloads
Cite This
URI
https://hdl.handle.net/11511/88053
Collections
Unverified, Conference / Seminar
Suggestions
OpenMETU
Core
Temperature dependent dispersoid stability in ion-irradiated ferritic-martensitic dual-phase oxide-dispersion-strengthened alloy: Coherent interfaces vs. incoherent interfaces
Chen, Tianyi; Gigax, Jonathan G.; Price, Lloyd; Chen, Di; Ukai, S.; Aydoğan Güngör, Eda; Maloy, S. A.; Garner, F. A.; Shao, Lin (Elsevier BV, 2016-09-01)
In this study, the microstructure of a 12Cr ferritic-martensitic oxide-dispersion-strengthened (ODS) alloy is studied before and after Fe ion irradiation up to 200 peak displacements per atom (dpa). Irradiation temperature ranges from 325 to 625 degrees C. Before irradiation, both coherent and incoherent dispersoids exist in the matrix. In response to irradiation, the mean sizes of dispersoids in both the ferrite and tempered martensite phases change to equilibrium values that increase with irradiation temp...
Temperature -dependent optical and electrical characterization of Cu-Ga-S thin films and their diode characteristics on n-Si
Gullu, H. H.; Isik, M.; Hasanlı, Nızamı; Parlak, Mehmet (Elsevier BV, 2020-04-01)
In this paper, optical and electrical properties of thermally deposited Cu-Ga-S thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The analysis of the transmission spectra resulted in formation of three direct optical transitions due to the possible valence band splitting in the structure. The band gap values were calculated by means of absorption coefficient and incident photon energy was found in decreasing behavior as the temperature ri...
Temperature dependent band gap in SnS2xSe(2-2x) (x=0.5) thin films
Delice, S.; Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Hasanlı, Nızamı; Parlak, Mehmet (Elsevier BV, 2020-08-01)
Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffract...
Temperature dependence of electrical properties in In/Cu2ZnSnTe4/Si/Ag diodes
Gullu, H. H.; YILDIZ, DİLBER ESRA; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-04-01)
Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation in electrical characteristics of the diode was analysed by carrying out current-voltage (I-V) measurements in the temperature range of 220-360 K. The forward bias I-V behaviour was modelled according to the thermionic emission (TE) theory to obtain main diode parameters. In addit...
Temperature dependence of band gaps in sputtered SnSe thin films
Delice, S.; Isik, M.; Gullu, H.H.; Terlemezoğlu, Makbule; Bayrakli Surucu, O.; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2019-08-01)
Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400-1000 nm. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. The transmittance spectra were analyzed using Tauc relation and first derivative spectroscopy techniques to get band gap energy of the SnSe thin films. Both of the applied methods resulted in existence of two band ga...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
H. H. Güllü, D. E. Yıldız, M. Terlemezoğlu, and M. Parlak, “Temperature dependent current-voltage characteristics of SnTe-based Schottky Barrier Diode,” 2017, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/88053.