Temperature -dependent optical and electrical characterization of Cu-Ga-S thin films and their diode characteristics on n-Si

Date

2020-04-01

Author

Gullu, H. H.
Isik, M.
Hasanlı, Nızamı
Parlak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

163
views

0
downloads

In this paper, optical and electrical properties of thermally deposited Cu-Ga-S thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The analysis of the transmission spectra resulted in formation of three direct optical transitions due to the possible valence band splitting in the structure. The band gap values were calculated by means of absorption coefficient and incident photon energy was found in decreasing behavior as the temperature rises. The measured current-voltage values were used to extract the conductivity values which stand in the range of 1.73-2.62 (x104 O-1 cm-1) depending on the ambient temperature. These dark conductivity values were modeled by thermionic emission mechanism. The conductivity activation energies in the structures were calculated as 6.4, 14.5 and 40.7 meV according to the effects of grain boundary potentials. In addition, the films deposited on n-Si wafer showed a diode characteristic under the applied bias voltage between indium (In) front and silver (Ag) back contacts. From current-voltage measurements across the Si-based diode, about four orders of magnitude rectification was observed and the results were analyzed to determine the main diode parameters at dark and room temperature conditions.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

URI

https://hdl.handle.net/11511/37438

Journal

OPTIK

DOI

https://doi.org/10.1016/j.ijleo.2020.164485

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Material and Si-based diode analyses of sputtered ZnTe thin films Güllü, Hasan Hüseyin; Surucu, O. Bayrakli; Isik, M.; Terlemezoglu, M.; Parlak, M. (Springer Science and Business Media LLC, 2020-07-01) Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda-lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was o...
Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01) In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with s...
Temperature dependence of electrical properties in Cu0.5Ag0.5InSe2/Si heterostructure Gullu, H. H.; Parlak, Mehmet (Springer Science and Business Media LLC, 2018-07-01) The polycrystalline Cu0.5Ag0.5InSe2 thin film was deposited on mono-crystalline n-Si wafer by sequential thermal evaporation of elemental sources. p-Cu0.5Ag0.5InSe2/n-Si heterojunction diode was fabricated and the current-voltage characteristics of the diode at various temperatures were investigated to determine the main diode parameters and dark current transport mechanism. The studied diode structure showed a rectifying behavior with a barrier height of 0.63 eV at room temperature. Series and shunt resist...
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01) The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, Mehmet (Springer Science and Business Media LLC, 2020-06-01) This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calcula...

Citation Formats

H. H. Gullu, M. Isik, N. Hasanlı, and M. Parlak, “Temperature -dependent optical and electrical characterization of Cu-Ga-S thin films and their diode characteristics on n-Si,” OPTIK, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37438.