A study of wet oxidized A1(x)Ga(1-x)As for integrated optics

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1999-04-01

Author

Bek, Alpan
Champlain, JG
Naone, R

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An investigation of wet oxidized Al-x Ga1-xAs layers in integrated optical applications is reported, Refractive index and thickness shrinkage of wet oxidized AI(x)Ga(1-x)As layers are measured using spectroscopic ellipsometry, A Cauchy fit to the refractive index is found in the wavelength range between 0.3 and 1.6 mu m. The refractive index at 1.55 mu m is found to be 1.66+/-0.01 with little dispersion around 1.55 mu m. Very low loss single-mode waveguides with metal electrodes showing very low polarization dependence of loss coefficient are fabricated using wet oxidized AlxGa1-xAs layers as upper cladding, Optical polarization splitters are also designed and fabricated from the same type of waveguides taking advantage of increased birefringence, Designs utilizing wet oxidized AlxGa1-xAs are compared with conventional designs using only compound semiconductor heterostructures.

URI

https://hdl.handle.net/11511/92737

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS

DOI

https://doi.org/10.1109/68.752540

Collections

Department of Physics, Article

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Citation Formats

A. Bek, J. Champlain, and R. Naone, “A study of wet oxidized A1(x)Ga(1-x)As for integrated optics,” IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 11, no. 4, pp. 436–438, 1999, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/92737.